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S71WS256ND0BFWYM3

Description
Memory Circuit, Flash+PSRAM, CMOS, PBGA84
Categorystorage    storage   
File Size2MB,170 Pages
ManufacturerAMD
Websitehttp://www.amd.com
Environmental Compliance
Download Datasheet Parametric View All

S71WS256ND0BFWYM3 Overview

Memory Circuit, Flash+PSRAM, CMOS, PBGA84

S71WS256ND0BFWYM3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionFBGA, BGA84,10X12,32
Reach Compliance Codecompliant
Is SamacsysN
Maximum access time80 ns
JESD-30 codeR-PBGA-B84
Memory IC TypeMEMORY CIRCUIT
Mixed memory typesFLASH+PSRAM
Number of terminals84
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
Package body materialPLASTIC/EPOXY
encapsulated codeFBGA
Encapsulate equivalent codeBGA84,10X12,32
Package shapeRECTANGULAR
Package formGRID ARRAY, FINE PITCH
power supply1.8 V
Certification statusNot Qualified
Maximum standby current0.00004 A
Maximum slew rate0.066 mA
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Base Number Matches1
S71WS512Nx0/S71WS256Nx0 Based MCPs
Stacked Multi-Chip Product (MCP)
256/512 Megabit (32M/16M x 16 bit) CMOS
1.8 Volt-only Simultaneous Read/Write,
Burst-mode Flash Memory with
128/64Megabit (8M/4M x 16-Bit) pSRAM
Data Sheet
ADVANCE
INFORMATION
Notice to Readers:
This document states the current technical specifications
regarding the Spansion product(s) described herein. Each product described
herein may be designated as Advance Information, Preliminary, or Full
Production. See
“Notice On Data Sheet Designations”
for definitions.
Publication Number
S71WS-N-00
Revision
A
Amendment
3
Issue Date
May 2, 2005

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