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MIAA15WE600TMH

Description
Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, MINI PACKAGE-26
CategoryDiscrete semiconductor    The transistor   
File Size306KB,8 Pages
ManufacturerIXYS
Environmental Compliance  
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Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, MINI PACKAGE-26

MIAA15WE600TMH Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionMINI PACKAGE-26
Contacts26
Reach Compliance Codecompliant
Is SamacsysN
Other featuresUL RECOGNIZED
Shell connectionISOLATED
Maximum collector current (IC)23 A
Collector-emitter maximum voltage600 V
ConfigurationCOMPLEX
JESD-30 codeR-XUFM-X22
Number of components7
Number of terminals22
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)280 ns
Nominal on time (ton)85 ns
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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