CSB834O datasheet, PDF - EEWORLD Datasheet

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CSB834O: DescriptionPower Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size206KB，3 Pages; ManufacturerCDIL[Continental Device India Pvt. Ltd.]; Environmental Compliance

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CSB834O Overview

Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

CSB834O Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	conform to
Parts packaging code	SFM
package instruction	TO-220, 3 PIN
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Shell connection	COLLECTOR
Maximum collector current (IC)	3 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	30 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	9 MHz
Base Number Matches	1

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Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

PNP SILICON POWER TRANSISTOR

CSB834

TO-220

Audio Frequency Power Amplifier Applications.

Complementary CSD880

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)

DESCRIPTION

SYMBOL

VALUE

VCBO

60

Collector -Base Voltage

VCEO

60

Collector -Emitter Voltage

VEBO

7.0

Emitter- Base Voltage

IC

3.0

Collector Current

IB

0.5

Base Current

PC

1.5

Power Dissipation @ Ta=25 deg C

30

Power Dissipation @ Tc=25 deg C

Tj

150

Junction Temperature

Tstg

-55 to +150

Storage Temperature Range

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

ICBO

VCB=60V, IE=0

-

Collector Cut off Current

IEBO

VEB=7V, IC=0

-

Emitter Cut off Current

VCEO

IC=50mA, IB=0

60

-

Collector Emitter Voltage

hFE

IC=0.5A, VCE=5V

60

-

DC Current Gain

IC=3A, VCE=5V

20

-

VCE(Sat)

IC=3A, IB=0.3A

-

Collector Emitter Saturation Voltage

VBE(on)

IC=0.5A, VCE=5V

-

Base Emitter on Voltage

Dynamic Characteristics

ft

VCE=5V,IC=0.5A,

-

9.0

Transition Frequency

Cob

VCB=10V, IE=0

-

150

Collector Output Capacitance

f=1MHz

Switching Time

ton

VCC=30V,

-

0.4

Turn-0n Time

tstg

IB1=IB2=0.2A,

-

1.7

Storage Time

tf

Pulse Width=20us

-

0.5

Fall Time

Duty Cycle=1%

hFE CLASSIFICATION:-

O : 60 -120,

Y : 100 -200

UNIT

V

A

W

deg C

MAX

100

-

200

-

1.0

-

UNIT

uA

V

MHz

pF

-

us

Continental Device India Limited

Data Sheet

Page 1 of 3

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