Bulletin I25183 rev. B 03/94
ST103S SERIES
INVERTER GRADE THYRISTORS
Stud Version
Features
All diffused design
Center amplifying gate
Guaranteed high dv/dt
Guaranteed high di/dt
High surge current capability
Low thermal impedance
High speed performance
105A
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
C
I
T(RMS)
I
TSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
DRM
/V
RRM
t
q
range
T
J
ST103S
105
85
165
3000
3150
45
41
400 to 800
10 to 25
- 40 to 125
Units
A
°C
A
A
A
KA
2
s
KA
2
s
V
µs
°C
case style
TO-209AC (TO-94)
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1
ST103S Series
Bulletin I25183 rev. B 03/94
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
V
DRM
/V
RRM
, maximum
repetitive peak voltage
V
ST103S
04
08
400
800
V
RSM
, maximum
non-repetitive peak voltage
V
500
900
I
DRM
/I
RRM
max.
@ T
J
= T
J
max.
mA
30
Current Carrying Capability
Frequency
180
o
el
50Hz
400Hz
1000Hz
2500Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current di/dt
Case temperature
Equivalent values for RC circuit
280
310
320
340
50
V
DRM
50
60
I
TM
180
o
el
180
200
200
210
50
50
85
440
470
480
490
50
V
DRM
-
60
I
TM
100µs
330
300
310
320
50
-
85
4730
2500
1530
840
50
V
DRM
-
60
I
TM
Units
3630
1850
1090
580
50
-
85
V
A/µs
°C
A
22Ω / 0.15µF
22Ω / 0.15µF
22Ω / 0.15µF
On-state Conduction
Parameter
I
T(AV)
Max. average on-state current
@ Case temperature
I
T(RMS)
Max. RMS on-state current
I
TSM
Max. peak, one half cycle,
non-repetitive surge current
ST103S
105
85
165
3000
3150
2530
2650
Units
A
°C
Conditions
180° conduction, half sine wave
DC @ 76°C case temperature
t = 10ms
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max
A
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
I t
2
Maximum I t for fusing
2
45
41
32
29
KA
2
s
t = 10ms
t = 8.3ms
I
√t
2
Maximum I
√t
for fusing
2
450
KA
√s
2
t = 0.1 to 10ms, no voltage reapplied
2
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ST103S Series
Bulletin I25183 rev. B 03/94
On-state Conduction
Parameter
V
TM
Max. peak on-state voltage
ST103S
1.73
1.32
1.35
1.40
Units
Conditions
I
TM
= 300A, T
J
= T
J
max, t
p
= 10ms sine wave pulse
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)2
High level value of threshold
voltage
r
t
1
V
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I > x
π
x I
T(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I > x
π
x I
T(AV)
), T
J
= T
J
max.
Low level value of forward
slope resistance
mΩ
1.30
600
1000
mA
r
t
2
I
H
I
L
High level value of forward
slope resistance
Maximum holding current
Typical latching current
T
J
= 25°C, I
T
> 30A
T
J
= 25°C, V
A
= 12V, Ra = 6Ω, I
G
= 1A
Switching
Parameter
di/dt
Max. non-repetitive rate of rise
of turned-on current
t
d
ST103S
1000
0.80
Min
10
Max
25
Units
A/µs
Conditions
T
J
= T
J
max, V
DRM
= rated V
DRM
I
TM
= 2 x di/dt
T
J
= 25°C, V
DM
= rated V
DRM
, I
TM
= 50A DC, t
p
= 1µs
Resistive load, Gate pulse: 10V, 5Ω source
T
J
= T
J
max, I
TM
= 100A, commutating di/dt = 10A/µs
V
R
= 50V, t
p
= 200µs, dv/dt: see table in device code
Typical delay time
µs
t
q
Max. turn-off time
Blocking
Parameter
dv/dt
I
RRM
I
DRM
Maximum critical rate of rise of
off-state voltage
Max. peak reverse and off-state
leakage current
ST103S
500
30
Units
V/µs
mA
Conditions
T
J
= T
J
max., linear to 80% V
DRM
, higher value
available on request
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
Triggering
Parameter
P
GM
Maximum peak gate power
ST103S
40
5
5
20
Units
W
A
Conditions
T
J
= T
J
max, f = 50Hz, d% = 50
T
J
= T
J
max, t
p
≤
5ms
P
G(AV)
Maximum average gate power
I
GM
+V
GM
-V
GM
I
GT
V
GT
I
GD
V
GD
Max. peak positive gate current
Maximum peak positive
gate voltage
Maximum peak negative
gate voltage
Max. DC gate current required
to trigger
Max. DC gate voltage required
to trigger
Max DC gate current not to trigger
Max. DC gate voltage not to trigger
V
5
200
3
20
0.25
mA
T
J
= T
J
max, t
p
≤
5ms
T
J
= 25°C, V
A
= 12V, Ra = 6Ω
V
mA
V
T
J
= T
J
max, rated V
DRM
applied
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3
ST103S Series
Bulletin I25183 rev. B 03/94
Thermal and Mechanical Specifications
Parameter
T
J
T
stg
ST103S
-40 to 125
-40 to 150
0.195
0.08
15.5
(137)
14
(120)
Units
°C
Conditions
Max. junction operating temperature range
Max. storage temperature range
Max. thermal resistance, junction to case
Max. thermal resistance, case to heatsink
Mounting torque, ± 10%
R
thJC
R
thCS
T
DC operation
K/W
Nm
(Ibf-in)
Nm
(Ibf-in)
g
See Outline Table
Non lubricated threads
Lubricated threads
Mounting surface, smooth, flat and greased
wt
Approximate weight
Case style
130
TO-209AC (TO-94)
∆R
thJC
Conduction
(The following table shows the increment of thermal resistence R
thJC
when devices operate at different conduction angles than DC)
Conduction angle
180°
120°
90°
60°
30°
Sinusoidal conduction Rectangular conduction Units
0.034
0.040
0.052
0.076
0.126
0.025
0.042
0.056
0.079
0.127
K/W
Conditions
T
J
= T
J
max.
Ordering Information Table
Device Code
ST
1
10
2
3
3
S
4
08
5
P
6
F
7
N
8
0
9
10
1
2
3
4
5
6
7
8
9
- Thyristor
- Essential part number
- 3 = Fast turn off
- S = Compression bonding Stud
- Voltage code: Code x 100 = V
RRM
(See Voltage Ratings table)
- P = Stud Base 1/2" 20UNF
- Reapplied dv/dt code (for t
q
test condition)
- t
q
code
dv/dt - t
q
combinations available
200
FN *
FM
FL
*
FP
FK
--
400
--
HM
HL
HP
HK
HJ
dv/dt (V/µs)
20
50
100
10
CN
DN
EN
- 0 = Eyelet terminals (Gate and Aux. Cathode Leads)
12
CM
DM
EM
1 = Fast-on terminals (Gate and Aux. Cathode Leads)
15
CL
DL
EL
t
q
(µs)
18
CP
DP
EP
2 = Flag terminals (For Cathode and Gate Terminals)
20
CK
DK
EK
- Critical dv/dt:
25
--
--
--
None = 500V/µsec (Standard value)
*
Standard part number.
All other types available only on request.
10
L
= 1000V/µsec (Special selection)
4
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ST103S Series
Bulletin I25183 rev. B 03/94
Outline Table
CERAMIC HOUSING
16.5 (0.65) MAX.
2.6 (0.10) MAX.
4.3 (0.17) DIA
9. 5
20
(0.
(0.
37
79)
)M
MI
IN .
N.
8.5 (0.33) DIA.
FLEXIBLE LEAD
C.S. 16mm 2
(.025 s.i.)
RED SILICON RUBBER
157 (6.18)
170 (6.69)
RED CATHODE
C.S. 0.4 mm 2
(.0006 s.i.)
Fast-on Terminals
WHITE GATE
AMP. 280000-1
REF-250
10 (0.39)
215 (8.46)
70 (2.75) MIN.
RED SHRINK
29 (1.14) MAX.
WHITE SHRINK
12. 5 (0.49) MAX.
22.5 (0.88) MAX. DIA.
21 (0.83)
MAX.
SW 27
1/2"-20UNF-2A
Case Style TO-209AC (TO-94)
29.5 (1.16)
MAX.
All dimensions in millimeters (inches)
CERAMIC HOUSING
FLAG TERMINALS
22.5 DIA.
(0.89) MAX.
1.5 (0.06) DIA.
10
(0.39)
5.2 (0.20) DIA.
46 (1.81)
49 (1.93)
7.5
(0.30)
1 2.5 (0.49)
21(0.83 )
MAX.
Case Style TO-208AD (TO-83)
All dimensions in millimeters (inches)
MAX .
1/2"-20UNF-2A
SW 27
29 (1.14) MAX.
2.4 (0.09)
29.5 (1.16)
(0.6 5)
16.5
10
(0.39)
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5
Microcontroller MCU
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