MCR218-6G datasheet, PDF - EEWORLD Datasheet

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MCR218-6G: DescriptionSilicon Controlled Rectifiers Reverse Blocking Thyristors; CategoryAnalog mixed-signal IC Trigger device; File Size52KB，4 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn; Environmental Compliance

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MCR218-6G Overview

Silicon Controlled Rectifiers Reverse Blocking Thyristors

MCR218-6G Parametric

Parameter Name	Attribute value
Brand Name	ON Semiconduc
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Manufacturer packaging code	221A
Reach Compliance Code	_compli
Factory Lead Time	1 week
Shell connection	ANODE
Configuration	SINGLE
Critical rise rate of minimum off-state voltage	100 V/us
Maximum DC gate trigger current	25 mA
Maximum DC gate trigger voltage	1.5 V
Maximum holding current	30 mA
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Maximum leakage current	2 mA
On-state non-repetitive peak current	100 A
Number of components	1
Number of terminals	3
Maximum on-state current	8000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
Maximum rms on-state current	8 A
Off-state repetitive peak voltage	400 V
Repeated peak reverse voltage	400 V
surface mount	NO
Terminal surface	Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
Trigger device type	SCR
Base Number Matches	1

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MCR218−2, MCR218−4,

MCR218−6

Preferred Device

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

Designed primarily for half-wave ac control applications, such as

motor controls, heating controls and power supplies; or wherever

half-wave silicon gate-controlled, solid-state devices are needed.

Features

http://onsemi.com

•

Glass-Passivated Junctions

•

Blocking Voltage to 400 Volts

•

TO-220 Construction − Low Thermal Resistance, High Heat

Dissipation and Durability

•

Pb−Free Packages are Available*

MAXIMUM RATINGS

= 25°C unless otherwise noted)

Rating

Peak Repetitive Off−State Voltage (Note 1)

*40

to 125°C, Gate Open)

MCR218−2

MCR218−4

MCR218−6

On-State RMS Current

(180° Conduction Angles; T

= 70°C)

Peak Non-repetitive Surge Current

(1/2 Cycle, Sine Wave 60 Hz, T

= 125°C)

Circuit Fusing Considerations (t = 8.3 ms)

Forward Peak Gate Power

(Pulse Width

≤

1.0

ms,

= 70°C)

Forward Average Gate Power

(t = 8.3 ms, T

= 70°C)

Forward Peak Gate Current

(Pulse Width

≤

1.0

ms,

= 70°C)

Operating Junction Temperature Range

Storage Temperature Range

Symbol

DRM,

RRM

200

400

T(RMS)

TSM

G(AV)

stg

8.0

100

5.0

0.5

2.0

−40 to +125

−40 to +150

°C

Value

Unit

SCRs

8 AMPERES RMS

50 thru 400 VOLTS

MARKING

DIAGRAM

TO−220AB

CASE 221A−07

STYLE 3

AY WW

MCR218x−G

AKA

MCR218x

AKA

= Assembly Location

= Year

= Work Week

= Device Code

x = 2, 4 or 6

= Pb−Free Package

= Diode Polarity

ORDERING INFORMATION

Device

MCR218−2

MCR218−2G

MCR218−4

MCR218−4G

MCR218−6

MCR218−6G

Package

TO220AB

(Pb−Free)

TO220AB

(Pb−Free)

TO220AB

(Pb−Free)

Shipping

500 Units/Bulk

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. V

DRM

and V

RRM

for all types can be applied on a continuous basis. Ratings

apply for zero or negative gate voltage; however, positive gate voltage shall

not be applied concurrent with negative potential on the anode. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2005

Preferred

devices are recommended choices for future use

and best overall value.

November, 2005 − Rev. 4

Publication Order Number:

MCR218/D

MCR218-6G Related Products

	MCR218-6G	MCR218-6	MCR218-4	MCR218-4G	MCR218-2G	MCR218	MCR218-2
Description	Silicon Controlled Rectifiers Reverse Blocking Thyristors	Silicon Controlled Rectifiers Reverse Blocking Thyristors	Silicon Controlled Rectifiers Reverse Blocking Thyristors	Silicon Controlled Rectifiers Reverse Blocking Thyristors	Silicon Controlled Rectifiers Reverse Blocking Thyristors	Silicon Controlled Rectifiers Reverse Blocking Thyristors	Silicon Controlled Rectifiers Reverse Blocking Thyristors
Is it lead-free?	Lead free	Contains lead	Contains lead	Lead free	Lead free	-	Contains lead
Is it Rohs certified?	conform to	incompatible	incompatible	conform to	conform to	-	incompatible
Parts packaging code	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB	-	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	-	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3	3	3	3	-	3
Manufacturer packaging code	221A	CASE 221A-09	CASE 221A-09	221A-07	221A-07	-	CASE 221A-09
Reach Compliance Code	_compli	_compli	_compli	_compli	_compli	-	_compli
Shell connection	ANODE	ANODE	ANODE	ANODE	ANODE	-	ANODE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	-	SINGLE
Critical rise rate of minimum off-state voltage	100 V/us	100 V/us	100 V/us	100 V/us	100 V/us	-	-
Maximum DC gate trigger current	25 mA	25 mA	25 mA	25 mA	25 mA	-	25 mA
Maximum DC gate trigger voltage	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V	-	1.5 V
Maximum holding current	30 mA	30 mA	30 mA	30 mA	30 mA	-	30 mA
JEDEC-95 code	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB	-	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	-	R-PSFM-T3
JESD-609 code	e3	e0	e0	e3	e3	-	e0
Maximum leakage current	2 mA	2 mA	2 mA	2 mA	2 mA	-	2 mA
On-state non-repetitive peak current	100 A	80 A	80 A	100 A	100 A	-	100 A
Number of components	1	1	1	1	1	-	1
Number of terminals	3	3	3	3	3	-	3
Maximum on-state current	8000 A	8000 A	8000 A	8000 A	8000 A	-	8000 A
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	-	125 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-	-40 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	-	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260	NOT SPECIFIED	NOT SPECIFIED	260	NOT SPECIFIED	-	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified
Maximum rms on-state current	8 A	8 A	8 A	8 A	8 A	-	8 A
Off-state repetitive peak voltage	400 V	400 V	200 V	200 V	50 V	-	50 V
Repeated peak reverse voltage	400 V	400 V	200 V	200 V	50 V	-	50 V
surface mount	NO	NO	NO	NO	NO	-	NO
Terminal surface	Tin (Sn)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin (Sn)	Tin (Sn)	-	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	-	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	-	SINGLE
Maximum time at peak reflow temperature	40	NOT SPECIFIED	NOT SPECIFIED	40	NOT SPECIFIED	-	NOT SPECIFIED
Trigger device type	SCR	SCR	SCR	SCR	SCR	-	SCR
Base Number Matches	1	1	1	1	1	-	1
ECCN code	-	-	EAR99	EAR99	EAR99	-	EAR99

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