Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Symbol
R
qJC
R
qJA
T
L
Max
3.0
80
260
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current; R
GK
= 1 kW (Note 3)
(V
AK
= Rated V
DRM
or V
RRM
)
T
C
= 25°C
T
C
= 110°C
ON CHARACTERISTICS
Peak Reverse Gate Blocking Voltage (I
GR
= 10
mA)
Peak Reverse Gate Blocking Current (V
GR
= 10 V)
Peak Forward On−State Voltage (Note 4)
(I
TM
= 5.0 A Peak)
(I
TM
= 8.2 A Peak)
Gate Trigger Current (Continuous dc) (Note 5)
(V
D
= 12 Vdc, R
L
= 30
W)
Gate Trigger Voltage (Continuous dc) (Note 5)
(V
D
= 12 Vdc, R
L
= 30
W)
T
C
= 25°C
T
C
=
−40°C
T
C
= 25°C
T
C
=
−40°C
T
C
= 110°C
T
C
= 25°C
T
C
=
−40°C
V
RGM
I
RGM
V
TM
10
−
−
−
1.0
−
0.3
−
0.2
0.4
−
−
−
−
12.5
−
1.3
1.5
25
−
0.55
−
−
1.0
−
−
−
2.0
18
1.2
1.5
2.2
75
300
0.8
1.0
−
mA
5.0
10
mA
5.0
10
5.0
ms
mA
V
mA
V
I
DRM
I
RRM
−
−
−
−
10
200
mA
Symbol
Min
Typ
Max
Unit
I
GT
V
GT
V
Holding Current (Note 3)
(V
D
= 12 Vdc, Initiating Current = 20 mA, R
GK
= 1 kW)
Latching Current (Note 3) (R
GK
= 1 kW)
(V
D
= 12 Vdc, I
G
= 2.0 mA, T
C
= 25°C)
(V
D
= 12 Vdc, I
G
= 2.0 mA, T
C
=
−40°C)
I
H
I
L
Total Turn-On Time
(Source Voltage = 12 V, R
S
= 6 kW, I
T
= 8 A(pk), R
GK
= 1 kW)
(V
D
= Rated V
DRM
, Rise Time = 20 ns, Pulse Width = 10
ms)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(V
D
= 0.67 x Rated V
DRM
, R
GK
= 1 kW, Exponential Waveform, T
J
= 110°C)
Repetitive Critical Rate of Rise of On−State Current
(f = 60 Hz, I
PK
= 30 A, PW = 100
ms,
dIG/dt = 1 A/ms)
t
gt
dv/dt
di/dt
5.0
−
10
−
−
100
V/ms
A/ms
2. Case 369C, when surface mounted on minimum recommended pad size.
3. Ratings apply for negative gate voltage or R
GK
= 1 kW. Devices shall not have a positive gate voltage concurrently with a negative voltage
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage
applied exceeds the rated blocking voltage.
4. Pulse Test: Pulse Width
≤
2 ms, Duty Cycle
≤
2%.
5. R
GK
current not included in measurements.
ORDERING INFORMATION
Device
MCR716T4
MCR716T4G
MCR718T4
MCR718T4G
Package
DPAK
DPAK
(Pb−Free)
DPAK
DPAK
(Pb−Free)
Shipping
†
2500 / Tape and Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
MCR716, MCR718
Voltage Current Characteristic of SCR
+ Current
Anode +
V
TM
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Off−State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off−State Reverse Voltage
Peak Reverse Blocking Current
Peak On−State Voltage
Holding Current
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode
−
I
RRM
at V
RRM
on state
I
H
+ Voltage
I
DRM
at V
DRM
Forward Blocking Region
(off state)
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (
°
C)
P(AV), AVERAGE POWER DISSIPATION (WATTS)
110
5.0
DC
180°
120°
90°
60°
2.0
30°
30°
105
60°
90°
120°
180°
DC
100
4.0
3.0
1.0
0
0
1.0
2.0
3.0
4.0
5.0
I
T(RMS)
, RMS ON-STATE CURRENT (AMPS)
95
0
1.0
2.0
3.0
4.0
5.0
I
T(RMS)
, RMS ON-STATE CURRENT (AMPS)
Figure 1. RMS Current Derating
Figure 2. On−State Power Dissipation
IT, INSTANTANEOUS ON-STATE CURRENT (AMPS)
Typical @ T
J
= 25°C
Maximum @ T
J
= 110°C
10
r(t) , TRANSIENT RESISTANCE (NORMALIZED)
100
1.0
Z
qJC(t)
= R
qJC(t)
•r(t)
0.1
Maximum @ T
J
= 25°C
1.0
0.1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
T
, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
0.01
0.1
1.0
10
100
1000
10,000
t, TIME (ms)
Figure 3. On−State Characteristics
Figure 4. Transient Thermal Response
http://onsemi.com
3
MCR716, MCR718
35
VGT, GATE TRIGGER VOLTAGE (VOLTS)
-20
20
40
60
80
100 110
I GT, GATE TRIGGER CURRENT (
m
A)
1.0
30
25
0.5
20
15
-40
0
0
-40
-20
0
20
40
60
80
100 110
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Gate Trigger Current versus
Junction Temperature
Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature
2.0
2.0
IH , HOLDING CURRENT (mA)
1.5
IL , LATCHING CURRENT (mA)
-20
0
20
40
60
80
100 110
1.5
1.0
1.0
0.5
0.5
0
-40
0
-40
-20
0
20
40
60
80
100 110
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Holding Current versus
Junction Temperature
Figure 8. Typical Latching Current versus
Junction Temperature
http://onsemi.com
4
MCR716, MCR718
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE A
−T−
B
V
R
4
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
0.180 0.215
0.025 0.040
0.020
−−−
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.57
5.45
0.63
1.01
0.51
−−−
0.89
1.27
3.93
−−−
C
E
S
A
1
2
3
Z
U
K
F
L
D
G
2 PL
J
H
0.13 (0.005)
T
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
M
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
3.0
0.118
SCALE 3:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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