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2SC1971

Description
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)
CategoryDiscrete semiconductor    The transistor   
File Size116KB,3 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
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2SC1971 Overview

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)

2SC1971 Parametric

Parameter NameAttribute value
Parts packaging codeSFM
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionEMITTER
Maximum collector current (IC)12 A
Collector-emitter maximum voltage17 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
highest frequency bandVERY HIGH FREQUENCY BAND
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment12.5 W
Maximum power dissipation(Abs)1.5 W
Minimum power gain (Gp)10 dB
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1

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