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EDI44256C120ZB

Description
Fast Page DRAM, 256KX4, 120ns, CMOS, CZIP20,
Categorystorage    storage   
File Size1022KB,18 Pages
ManufacturerEDI [Electronic devices inc.]
Download Datasheet Parametric View All

EDI44256C120ZB Overview

Fast Page DRAM, 256KX4, 120ns, CMOS, CZIP20,

EDI44256C120ZB Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codeunknown
Is SamacsysN
access modeFAST PAGE
Maximum access time120 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O typeCOMMON
JESD-30 codeR-CZIP-T20
JESD-609 codee0
memory density1048576 bit
Memory IC TypeFAST PAGE DRAM
memory width4
Number of functions1
Number of ports1
Number of terminals20
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize256KX4
Output characteristics3-STATE
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeZIP
Encapsulate equivalent codeZIP20,.1
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
refresh cycle512
Filter level38535Q/M;38534H;883B
Maximum standby current0.0005 A
Maximum slew rate0.06 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch1.27 mm
Terminal locationZIG-ZAG
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

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