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NDP6060LJ69Z

Description
Power Field-Effect Transistor, 48A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size171KB,6 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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NDP6060LJ69Z Overview

Power Field-Effect Transistor, 48A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

NDP6060LJ69Z Parametric

Parameter NameAttribute value
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Other featuresLOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)200 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)48 A
Maximum drain-source on-resistance0.025 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)144 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

NDP6060LJ69Z Related Products

NDP6060LJ69Z NDB6060LL99Z NDB6060LS62Z
Description Power Field-Effect Transistor, 48A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Power Field-Effect Transistor, 48A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB Power Field-Effect Transistor, 48A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
package instruction FLANGE MOUNT, R-PSFM-T3 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Other features LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas) 200 mJ 200 mJ 200 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V 60 V 60 V
Maximum drain current (ID) 48 A 48 A 48 A
Maximum drain-source on-resistance 0.025 Ω 0.025 Ω 0.025 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-220AB TO-263AB TO-263AB
JESD-30 code R-PSFM-T3 R-PSSO-G2 R-PSSO-G2
Number of components 1 1 1
Number of terminals 3 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 144 A 144 A 144 A
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO YES YES
Terminal form THROUGH-HOLE GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Base Number Matches 1 1 -
Shell connection - DRAIN DRAIN

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