P105RH06FJ0 datasheet, PDF - EEWORLD Datasheet

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P105RH06FJ0: DescriptionSilicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,600V V(DRM),175A I(T),TO-208VAR1/2; CategoryAnalog mixed-signal IC Trigger device; File Size288KB，4 Pages; ManufacturerIXYS

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P105RH06FJ0 Overview

Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,600V V(DRM),175A I(T),TO-208VAR1/2

P105RH06FJ0 Parametric

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
Nominal circuit commutation break time	25 µs
Critical rise rate of minimum off-state voltage	200 V/us
Maximum DC gate trigger current	200 mA
Maximum DC gate trigger voltage	3 V
Maximum holding current	600 mA
Maximum leakage current	20 mA
On-state non-repetitive peak current	2200 A
Maximum on-state current	175000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Off-state repetitive peak voltage	600 V
surface mount	NO
Trigger device type	SCR
Base Number Matches	1

P105RH06FJ0 Related Products

	P105RH06FJ0	P105RH06FK0	P105PH02CL0	P105RH06FL0	P140CH05DM0	P140CH05CM0	P105RH06CL0	P105RH04FJ0	P105RH06EJ0
Description	Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,600V V(DRM),175A I(T),TO-208VAR1/2	Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,600V V(DRM),175A I(T),TO-208VAR1/2	Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,200V V(DRM),175A I(T),TO-209AC	Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,600V V(DRM),175A I(T),TO-208VAR1/2	Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,500V V(DRM),354A I(T),TO-200AB	Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,500V V(DRM),354A I(T),TO-200AB	Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,600V V(DRM),175A I(T),TO-208VAR1/2	Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,400V V(DRM),175A I(T),TO-208VAR1/2	Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,600V V(DRM),175A I(T),TO-208VAR1/2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Critical rise rate of minimum off-state voltage	200 V/us	200 V/us	20 V/us	200 V/us	50 V/us	20 V/us	20 V/us	200 V/us	100 V/us
Maximum DC gate trigger current	200 mA	200 mA	200 mA	200 mA	200 mA	200 mA	200 mA	200 mA	200 mA
Maximum DC gate trigger voltage	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
Maximum holding current	600 mA	600 mA	600 mA	600 mA	600 mA	600 mA	600 mA	600 mA	600 mA
Maximum leakage current	20 mA	20 mA	20 mA	20 mA	30 mA	30 mA	20 mA	20 mA	20 mA
On-state non-repetitive peak current	2200 A	2200 A	2200 A	2200 A	3200 A	3200 A	2200 A	2200 A	2200 A
Maximum on-state current	175000 A	175000 A	175000 A	175000 A	354000 A	354000 A	175000 A	175000 A	175000 A
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-30 °C	-30 °C	-40 °C	-40 °C	-40 °C
Off-state repetitive peak voltage	600 V	600 V	200 V	600 V	500 V	500 V	600 V	400 V	600 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO
Trigger device type	SCR	SCR	SCR	SCR	SCR	SCR	SCR	SCR	SCR
Nominal circuit commutation break time	25 µs	20 µs	15 µs	15 µs	-	-	15 µs	25 µs	25 µs
Maker	-	-	-	-	IXYS	IXYS	IXYS	IXYS	IXYS

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