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2SB745

Description
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires
CategoryDiscrete semiconductor    The transistor   
File Size39KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
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2SB745 Overview

Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires

2SB745 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.05 A
Collector-emitter maximum voltage35 V
ConfigurationSINGLE
Minimum DC current gain (hFE)180
JESD-30 codeR-PSIP-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature135 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Base Number Matches1

2SB745 Related Products

2SB745 2SB0745 2SB745A
Description Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires
package instruction IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Contacts 3 3 3
Reach Compliance Code unknow unknow unknow
ECCN code EAR99 EAR99 EAR99
Other features LOW NOISE LOW NOISE LOW NOISE
Maximum collector current (IC) 0.05 A 0.05 A 0.05 A
Collector-emitter maximum voltage 35 V 35 V 55 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 180 180 180
JESD-30 code R-PSIP-T3 R-PSIP-T3 R-PSIP-T3
Number of components 1 1 1
Number of terminals 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE
Polarity/channel type PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 150 MHz 150 MHz 150 MHz
Base Number Matches 1 1 1
Is it Rohs certified? incompatible - incompatible
JESD-609 code e0 - e0
Maximum operating temperature 135 °C - 135 °C
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED
Maximum power dissipation(Abs) 0.3 W - 0.3 W
Terminal surface Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb)
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED

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