Si4133G
Si4123G/22G/13G/12G
D
UAL
-B
AND
RF S
YNTHESIZER
W
ITH
I
NTEGRATED
VCO
S
F
OR
GSM
AND
GPRS W
IRELESS
C
OMMUNICATIONS
Features
RF1: 900 MHz to 1.8 GHz
RF2: 750 MHz to 1.5 GHz
33
S
i4
1
G
-B
T
Dual-band RF Synthesizers
IF synthesizer: 500 to
1000 MHz
Integrated VCOs, loop filters,
varactors, and resonators
Minimal number of external
components required
Fast settling time: 140
µs
GPRS Class 12 compliant
Low phase noise
Programmable powerdown modes
1 µA standby current
18 mA typical supply current
2.7 to 3.6 V operation
Packages: 24-pin TSSOP and
28-pin MLP
Ordering Information:
See page 28.
Applications
GSM 850, E-GSM 900, DCS 1800, and PCS 1900 cellular
telephones
GPRS data terminals
HSCSD data terminals
Pin Assignments
Si4133G-BT
SCLK
SDATA
GNDR
RFLD
RFLC
GNDR
RFLB
RFLA
GNDR
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
SEN
VDDI
IFOUT
GNDI
IFLB
IFLA
GNDD
VDDD
GNDD
XIN
PWDN
AUXOUT
Description
The Si4133G is a monolithic integrated circuit that performs both IF and
dual-band RF synthesis for GSM and GPRS wireless communications
applications. The Si4133G includes three VCOs, loop filters, reference
and VCO dividers, and phase detectors. Divider and powerdown settings
are programmable with a three-wire serial interface.
Functional Block Diagram
Reference
Amplifier
Power
Down
Control
GNDR
RFOUT
VDDR
XIN
÷
65
Phase
Detector
RF1
RFLA
RFLB
PWDN
SDATA
IFOUT
23
GNDR
SCLK
SDATA
SCLK
SEN
Serial
Interface
22-bit
Data
Register
Phase
Detector
RF2
RFLC
RFLD
GNDR
RFLD
RFLC
1
2
3
4
5
6
7
28
27
26
25
24
22
21
20
19
GNDI
SEN
VDDI
÷
N
Si4133G-BM
RFOUT
GNDI
IFLB
IFLA
GNDD
VDDD
GNDD
XIN
÷
N
Phase
Detector
IF
IFOUT
IFLA
IFLB
AUXOUT
Test
Mux
GNDR
RFLB
RFLA
GNDR
GND
Pad
18
17
16
15
÷
N
8
9
10
11
12
13
14
RFOUT
AUXOUT
GNDR
GNDR
Patents pending
Rev. 1.4 5/03
Copyright © 2003 by Silicon Laboratories
Si4133G-DS14
PWDN
GNDD
VDDR
Si4133G
T
A B L E O F
C
O N T E N TS
Section
Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Application Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Serial Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Setting the VCO Center Frequencies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Self-Tuning Algorithm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Frequencies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PLL Loop Dynamics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RF and IF Outputs (RFOUT and IFOUT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reference Frequency Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Powerdown Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Auxiliary Output (AUXOUT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Control Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pin Descriptions: Si4133G-BT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pin Descriptions: Si4133G-BM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Ordering Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Si4133G Derivative Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Package Outline: Si4133G-BT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Package Outline: Si4133G-BM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Document Change List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Contact Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Page
4
14
15
15
15
16
17
17
17
18
18
18
20
24
26
28
28
29
30
31
32
Rev. 1.4
3
Si4133G
Electrical Specifications
Table 1. Recommended Operating Conditions
Parameter
Ambient Temperature
Supply Voltage
Supply Voltages Difference
Symbol
T
A
V
DD
V
∆
(V
DDR
– V
DDD
),
(V
DDI
– V
DDD
)
Test Condition
Min
–20
2.7
–0.3
Typ
25
3.0
—
Max
85
3.6
0.3
Unit
°C
V
V
Note:
All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Typical values apply at 3.0 V and an operating temperature of 25 °C unless otherwise stated.
Table 2. Absolute Maximum Ratings
1,2
Parameter
DC Supply Voltage
Input Current
3
Input Voltage
3
Storage Temperature Range
Symbol
V
DD
I
IN
V
IN
T
STG
Value
–0.5 to 4.0
±10
–0.3 to V
DD
+0.3
–55 to 150
Unit
V
mA
V
°C
Notes:
1.
Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation
should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2. This device is a high performance RF integrated circuit with an ESD rating of < 2 kV. Handling and assembly of
this device should only be done at ESD-protected workstations.
3.
For signals SCLK, SDATA, SEN, PWDN and XIN.
4
Rev. 1.4
Si4133G
Table 3. DC Characteristics
(V
DD
= 2.7 to 3.6 V, T
A
= –20 to 85 °C)
Parameter
Typical Supply Current
1
RF1 Mode Supply Current
1
RF2 Mode Supply Current
1
IF Mode Supply Current
1
Standby Current
High Level Input Voltage
2
Low Level Input Voltage
2
High Level Input Current
2
Low Level Input Current
2
High Level Output Voltage
3
Low Level Output Voltage
3
Symbol
Test Condition
RF1 and IF Operating
Min
—
—
—
—
Typ
18
13
12
10
1
—
—
—
—
—
—
Max
31
17
17
14
—
—
0.3 V
DD
10
10
—
0.4
Unit
mA
mA
mA
mA
µA
V
V
µA
µA
V
V
PWDN = 0
V
IH
V
IL
I
IH
I
IL
V
OH
V
OL
V
IH
=
3.6 V,
V
DD
= 3.6 V
V
IL
=
0 V,
V
DD
=
3.6 V
I
OH
= –500 µA
I
OH
= 500 µA
—
0.7 V
DD
—
–10
–10
V
DD
–0.4
—
Notes:
1.
RF1 = 1.55 GHz, RF2 = 1.2 GHz, IF
=
800 MHz
2.
For signals SCLK, SDATA, SEN, and PWDN.
3.
For signal AUXOUT.
Rev. 1.4
5
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