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EGP20F

Description
Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size21KB,1 Pages
ManufacturerShandong Yiguang Electronic Joint Stock Co., Ltd.
Download Datasheet Parametric View All

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Rectifier Diode

EGP20F Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
Is SamacsysN
Base Number Matches1
HIGH EFFICIENCY RECTIFIER
EGP20A
THRU
EGP20G
1.Dimensions of outlines
Unit: mm
YIGUANG
DO-15
2.Maximum Ratings
TYPE NUMBER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified
current 9.5mm lead length at T
A
=55
Peak Forward Surge Current, 8.3ms
single half-wave superimposed on rated
load (JEDEC method)
Operating junction temperature range
Storage temperature range
3.Electronical Characteristics (Ta=25
Symbols
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
T
stg
Units
V
V
V
A
A
EGP
20A
50
35
50
EGP
20B
100
70
100
EGP
20C
150
105
150
2.0
30
-65to+125
-65to+150
EGP
20D
200
140
200
EGP
20F
300
210
300
EGP
20G
400
280
400
unless otherwise specified)
TYPE NUMBER
Maximum instantaneous forward
voltage at2.0A
Maximum DC reverse Ta=25
current at rated DC
Ta=100
blocking voltage
Maximum reverse recovery time
(test conditions:
IF=0.5A, IR=1.0A,IRR=0.25A)
Symbols Units
V
F
I
R1
I
R2
V
A
A
EGP20A
EGP20B
EGP20C
EGP20D
EGP20F
EGP20G
0.95
5.0.
100.0
1.3
T
rr
nS
50
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