MJE13005_06 datasheet, PDF - EEWORLD Datasheet

MJE13005_06: Description4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB; Categorysemiconductor Discrete semiconductor; File Size143KB，7 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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MJE13005_06 Overview

4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	NPN
Maximum collector current	4 A
Maximum Collector-Emitter Voltage	400 V
Processing package description	TO-220, 3 PIN
state	ACTIVE
packaging shape	Rectangle
Package Size	Flange mounting
Terminal form	THROUGH-hole
terminal coating	tin lead
Terminal location	single
Packaging Materials	Plastic/Epoxy
structure	single
Shell connection	COLLECTOR
Number of components	1
transistor applications	switch
Transistor component materials	silicon
Maximum ambient power consumption	2 W
Transistor type	universal power supply
Minimum DC amplification factor	8
Rated crossover frequency	4 MHz

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