MITSUBISHI LASER DIODES
ML9XX11,ML9XX16,ML9XX22 SERIES
Notice : Some parametric limits are subject to change
InGaAsP DFB LASER DIODES
TYPE
NAME
ML925B11F / ML925B16F / ML925B22F
ML920J11S / ML920J16S / ML920J22S
ML925J11F / ML925J16F / ML925J22F
ML920L11S / ML920L16S / ML920L22S
APPLICATION
·~1.25Gbps
digital transmission system
·
Coarse WDM application
DESCRIPTION
ML9XX11, ML9XX16 and ML9XX22 series are DFB
(Distributed Feedback) laser diodes emitting light
beam with emission wavelength of 1470 ~ 1610 nm.
They are well suited for light source in long
distance digital transmission application of coarse
WDM.
They are hermetically sealed devices with the photo
diode for optical output monitoring.
FEATURES
·
Homogeneous grating (AR/HR facet coating) structure
DFB
·
Wide temperature range operation ( 0 to 85ºC )
·
Low threshold current (typical 8mA)
·
High speed response (typical 0.1nsec)
·
8 wavelength with 20nm space at 1470 ~ 1610nm
·
φ5.6mm
TO-CAN package
·
Flat window cap, or Aspherical lens cap
ABSOLUTE MAXIMUM RATINGS
Symbol
Po
If
V
RL
V
RD
I
FD
Tc
Tstg
Parameter
Light output power
Forward current (Laser diode)
Reverse voltage (Laser diode)
Reverse voltage (Photo diode)
Forward current (Photo diode)
Case temperature
Storage temperature
Conditions
CW
---
---
---
---
---
---
Ratings
10
150
2
20
2
0 to +85
-40 to +100
Unit
mW
mA
V
V
mA
ºC
ºC
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC otherwise specified)
[ Flat window cap ; ML925B11F/ML925B16F/ML925B22F/ ML920J11S/ML920J16S/ML920J22S ]
Symbol
Ith
Iop
Vop
η
λp
θ
//
θ
┴
SMSR
tr,tf
Im
Id
Ct
Parameter
Threshold current
Operation current
Operating voltage
Slope efficiency
Peak wavelength
Beam divergence angle (parallel)
Beam divergence angle
(perpendicular)
Side mode suppression ratio
Rise and Fall time
Monitoring output current (PD)
Dark current (PD)
Capacitance (PD)
Test conditions
CW
CW, Tc=85
ºC
CW, Po=5mW
CW, Po=5mW, Tc=85
ºC
CW, Po=5mW
CW, Po=5mW
CW, Po=5mW
CW, Po=5mW
CW, Po=5mW
CW, Po=5mW
Tc= 0 to +85
ºC
Ib=Ith, 20-80% <*>
CW, Po=5mW
V
RD
=5V
V
RD
=5V
Min.
---
---
---
---
---
0.20
---
---
35
Typ.
8
30
25
60
1.1
0.28
<**>
25
35
40
Max.
15
50
40
80
1.5
---
35
45
---
Unit
mA
mA
V
mW/mA
nm
deg.
deg.
dB
---
0.1
0.2
ns
0.05
0.2
---
mA
---
---
0.1
µA
---
10
20
pF
<*> Except influence of the 18mm lead.
MITSUBISHI
ELECTRIC
Dec. 2004
MITSUBISHI LASER DIODES
ML9XX11,ML9XX16,ML9XX22 SERIES
Notice : Some parametric limits are subject to change
InGaAsP DFB LASER DIODES
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC otherwise specified)
[Aspherical lens cap ; ML925J11F/ML925J16F/ML925J22F/ ML920L11S/ML920L16S/ ML920L22S]
Symbol
Ith
Iop
Vop
η
λp
SMSR
Pf
Df
tr,tf
Im
Id
Ct
Parameter
Threshold current
Operation current
Operating voltage
Slope efficiency
Peak wavelength
Side mode suppression ratio
Fiber coupling power
Focul length
Rise and Fall time
Monitoring output current (PD)
Dark current (PD)
Capacitance (PD)
Test conditions
CW
mA
CW, Tc=85
ºC
CW, Po=5mW
mA
CW, Po=5mW, Tc=85
ºC
CW, Po=5mW
V
CW, Po=5mW
mW/mA
CW, Po=5mW
nm
CW, Po=5mW
35
40
---
dB
Tc= 0 to +85
ºC
CW, Po=5mW, SMF
1.5
2.0
---
mW
CW, Po=5mW, SMF
6.5
7.5
8.5
mm
Ib=Ith, 20-80% <*>
---
0.1
0.2
ns
CW, Po=5mW
0.05
0.2
---
mA
V
RD
=5V
---
---
0.1
µA
V
RD
=5V
---
10
20
pF
<*> Except influence of the 18mm lead.
Limits
Min.
1467
1487
1507
1527
1547
1567
1587
1607
Typ.
1470
1490
1510
1530
1550
1570
1590
1610
Max.
1473
1493
1513
1533
1553
1573
1593
1613
Min.
---
---
---
---
---
0.20
Typ.
8
30
25
60
1.1
0.28
<**>
Max.
15
50
40
80
1.5
---
Unit
<**> Peak wavelength
Type
ML925B16F-04 / ML920J16S-04 / ML925J16F-04 / ML920L16S-04
ML925B16F-05 / ML920J16S-05 / ML925J16F-05 / ML920L16S-05
ML925B11F-04 / ML920J11S-04 / ML925J11F-04 / ML920L11S-04
ML925B11F-05 / ML920J11S-05 / ML925J11F-05 / ML920L11S-05
ML925B11F-06 / ML920J11S-06 / ML925J11F-06 / ML920L11S-06
ML925B22F-04 / ML920J22S-04 / ML925J22F-04 / ML920L22S-04
ML925B22F-05 / ML920J22S-05 / ML925J22F-05 / ML920L22S-05
ML925B22F-06 / ML920J22S-06 / ML925J22F-06 / ML920L22S-06
Symb
ol
Test
condition
Unit
λp
CW
Po=5mW
Tc=25
ºC
nm
MITSUBISHI
ELECTRIC
Dec. 2004
MITSUBISHI LASER DIODES
ML9XX11,ML9XX16,ML9XX22 SERIES
Notice : Some parametric limits are subject to change
OUTLINE DRAWINGS
InGaAsP DFB LASER DIODES
ML925B11F
ML925B16F
ML925B22F
ML920J11S
ML920J16S
ML920J22S
Dimension : mm
φ5.6
-0.03
φ4.25
Ｙ
(0.25)
(3)
+0
(3)
LD
Case
(1)
(2)
PD
2-90°
(1)
(4)
(2)
Ｘ
(4)
1
±0.1
(0.25)
ML925B11F,ML925B16F,ML925B22F
0.25
±0.03
φ3.55±0.1
(3)
LD
1.27
±0.0
3
Case
(Glass)
φ2.0Min.
φ1.0Min.
2.1
±0.1
5
(1)
Emitting
Facet
Reference
Plane
(2)
PD
±0.1
18
±1
1.2
(4)
φ2.0
±0.25
(P.C.D.)
(1)
(2)
ML920J11S,ML920J16S,ML920J22S
4-φ0.45
±0.05
Pin Connection
( Top view )
ML925J11F
ML925J16F
ML925J22F
ML920L11S
ML920L16S
ML920L22S
(7.51)
Dimension : mm
(3)
+0
φ5.6
-0.03
Case
LD
φ4.3
Ｙ
(0.25)
Top View
(3)
(1)
(2)
PD
2-90°
(4)
(1)
(4)
(2)
Ｘ
(0.25)
ML925J11F,ML925J16F,ML925J22F
1±0.1
φ3.75±0.1
Ｚ
(3)
LD
Case
3.97
±0.15
1.27
±0.03
(1)
Emitting Facet
(2)
PD
Reference Plane
±0.1
18
±1
1.2
(4)
φ2.0
±0.25
(P.C.D.)
4-φ0.45
±0.05
ML920L11S,ML920L16S,ML920L22S
Pin Connection
( Top view )
(1)
(2)
MITSUBISHI
ELECTRIC
Dec. 2004
Analog electronics
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