ML925B40F-04 datasheet, PDF - EEWORLD Datasheet

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ML925B40F-04: Description2.5Gbps InGaAsP DFB LASER DIODE; CategoryLED optoelectronic/LED photoelectric; File Size207KB，3 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

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ML925B40F-04 Overview

2.5Gbps InGaAsP DFB LASER DIODE

ML925B40F-04 Parametric

Parameter Name	Attribute value
Maker	Mitsubishi
Reach Compliance Code	unknow
Configuration	SINGLE WITH BUILT-IN PHOTO DIODE
Maximum forward current	0.08 A
Maximum forward voltage	1.5 V
Installation features	THROUGH HOLE MOUNT
Number of functions	1
Maximum operating temperature	85 °C
Minimum operating temperature
Optoelectronic device types	LASER DIODE
Nominal output power	6 mW
peak wavelength	1470 nm
Maximum response time	1.2e-10 s
Semiconductor material	InGaAsP
shape	ROUND
size	2 mm
surface mount	NO
Maximum threshold current	15 mA

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MITSUBISHI LASER DIODES

ML9XX40 SERIES

Notice : Some parametric limits are subject to change

2.5Gbps

InGaAsP DFB LASER DIODE

TYPE

NAME

DESCRIPTION

ML925B40F / ML920J40S

ML925J40F / ML920L40S

APPLICATION

2.5Gbps long-haul transmission

Coarse WDM application

ML9XX40 series are uncooled DFB (Distributed Feedback) laser

diodes for 2.5Gbps transmission emitting light beam at 1470~1610nm.

λ/4

shifted grating structure is employed to obtain excellent SMSR

performance under 2.5Gbps modulation. Furthermore, ML9xx40 can

operate in the wide temperature range from 0

C to 85

C without any

temperature control. They are well suited for light source in long

distance digital transmission application of coarse WDM.

FEATURES

λ/4

shifted grating structure

Wide temperature range operation (0

C to 85

High side-mode-suppression-ratio (typical 45dB)

High resonance frequency (typical 11GHz)

ABSOLUTE MAXIMUM RATINGS

Symbol

Tstg

Parameter

Output power

Forward current (Laser diode)

Reverse voltage (Laser diode)

Forward current (Photo diode)

Reverse voltage (Photo diode)

Case temperature

Storage temperature

Conditions

---

Ratings

150

0 to +85

-40 to +100

Unit

ºC

ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC)

Symbol

Ith

Parameter

Threshold current

Test conditions

<*1>

Tc=85

ºC

<*2>

CW, Po=5mW

<*1>

Tc=85

ºC

<*2>

CW, Po=5mW

CW, Po=5mW <*3>

CW, Po=5mW

CW, Po=5mW, Tc=0 to 85

ºC

2.48832Gbps,Ib=Ith, Ipp=40mA

CW, Po=5mW

2.48832Gbps,Ib=Ith, Ipp=40mA

20%-80%

CW, Po=5mW,VRD=1V,RL=10Ω

=5V

Min. Typ. Max.

Unit

---

100

---

1.1

1.5

0.17 0.22

---

mW/mA

0.15 0.20

---

<*4>,<*5>

---

deg.

---

0.1

---

120

1.0

0.1

deg.

GHz

µA

Iop

Operation current

Vop

λp

SMSR

┴

tr,tf

Operating voltage

Slope efficiency

Peak wavelength

Side mode suppression ratio

Side mode suppression ratio(RF)

Beam divergence angle (parallel) <*6>

(perpendicular) <*6>

Resonance frequency

Rise and Fall time <*7>

Monitoring output current (PD)

Dark current (PD)

Capacitance (PD)

<*1> Applied to ML9xx40-04~09 and -12~17.

<*2> Applied to ML9xx40-10~11 and -18~19.

<*3> Applied to ML925J40F and ML920L40S.

<*6> Beam divergence is not applied to ML925J40F and ML920L40S.

<*7> Except influence of the 18mm lead.

MITSUBISHI

ELECTRIC

Feb. 2005

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