ML925J22F-05 datasheet, PDF - EEWORLD Datasheet

ML925J22F-05: DescriptionInGaAsP DFB LASER DIODES; CategoryLED optoelectronic/LED photoelectric; File Size163KB，3 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

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ML925J22F-05 Overview

InGaAsP DFB LASER DIODES

Parameter Name	Attribute value
Maker	Mitsubishi
package instruction	HERMETIC SEALED, TO-CAN PACKAGE-4
Reach Compliance Code	unknow
Configuration	SINGLE WITH BUILT-IN PHOTO DIODE
Maximum forward current	0.08 A
Maximum forward voltage	1.5 V
Installation features	THROUGH HOLE MOUNT
Number of functions	1
Maximum operating temperature	85 °C
Minimum operating temperature
Optoelectronic device types	LASER DIODE
Nominal output power	10 mW
peak wavelength	1590 nm
Maximum response time	2e-10 s
Semiconductor material	InGaAsP
shape	ROUND
surface mount	NO
Maximum threshold current	15 mA

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