SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
S9014LT1
NPN EPITAXIAL SILICON TRANSISTO
R
TECHNICAL DATA
PRE-AMPLIFIER,LOW LEVEL&LOW NOISE
*
Complement to S9015LT1
*
Collector Current: Ic= 100mA
*
Collector-Emitter Voltage:Vce= 45V
*
High Total Power Dissipation:Pc=225mW
*
High Hfe And Good Linearity
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation Ta=25℃*
Junction Temperature
Storage Temperature
Symbol
Vcbo
Vceo
Vebo
Ic
P
D
Tj
Tstg
Rating
50
45
5
100
225
150
-55-150
Unit
V
V
V
mA
mW
℃
℃
Package:
SOT-23
PIN:
STYLE
NO.1
1
2
3
B
E
C
ELECTRICAL CHARACTERISTICS at Ta=25℃
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage#
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter on Voltage
Output Capacitance
Current Gain-Bandwidth Product
Noise Figure
Symbol
BVcbo
BVceo
BVebo
Icbo
Iebo
Hfe
Vce(sat)
Vbe(sat)
Vbe(on)
Cob
f
T
NF
150
0.58
0.63
2.2
270
10
60
300
Min
50
45
5
50
50
1000
0.3
1.00
o.7
3.5
V
V
V
PF
MHz
dB
Typ
Max
Unit
V
V
V
nA
nA
Test Conditions
Ic=100uA
Ie=0
Ic= 1mA Ib=0
Ie= 100uA
Vcb= 50V
Veb= 5V
Ic=0
Ie=0
Ic= 0
Vce= 5V Ic= 1mA
Ic= 100mA Ib= 5mA
Ic= 100mA Ib= 5mA
Vce= 5V Ic= 2mA
Vcb= 10V Ie=0 f=1MHz
Vce= 5V Ic= 10mA
Vce= 5V Ic= 0.2mA
f=1KHz Rs=2Kohm
*
#
Total Device Dissipation : FR=1
X
0.75
X
0.062in Board,Derate 25℃.
Pulse Test : Pulse Width
≤300uS,Duty
cycle
≤2%
DEVICE MARKING:
S9014LT1=L6
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