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MMPQ3467R1

Description
1A, 40V, 4 CHANNEL, PNP, Si, POWER TRANSISTOR, CASE 751B-05, SOP-16
CategoryDiscrete semiconductor    The transistor   
File Size144KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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MMPQ3467R1 Overview

1A, 40V, 4 CHANNEL, PNP, Si, POWER TRANSISTOR, CASE 751B-05, SOP-16

MMPQ3467R1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeSOIC
package instructionSMALL OUTLINE, R-PDSO-G16
Contacts16
Manufacturer packaging codeCASE 751B-05
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Maximum collector current (IC)1 A
Collector-emitter maximum voltage40 V
ConfigurationSEPARATE, 4 ELEMENTS
Minimum DC current gain (hFE)20
JESD-30 codeR-PDSO-G16
JESD-609 codee0
Number of components4
Number of terminals16
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)190 MHz
Base Number Matches1
MMPQ3467
Quad Memory Driver
Transistor
PNP Silicon
Rating
Collector
−Emitter
Voltage
Collector
−Base
Voltage
Emitter
−Base
Voltage
Collector Current —
Continuous
MAXIMUM RATINGS
Symbol
V
CEO
V
CB
V
EB
I
C
Value
−40
−40
−5.0
−1.0
Four
Transistors
Equal
Power
W
0.52
4.2
1.0
8.0
1.2
9.6
2.5
20
mW/°C
W
mW/°C
°C
Unit
Vdc
Vdc
Vdc
Adc
16
1
http://onsemi.com
Each
Transistor
Power Dissipation
@ T
A
= 25°C
Derate above 25°C
Power Dissipation
@ T
C
= 25°C
Derate above 25°C
Operating and Storage
Junction Temperature
Range
P
D
CASE 751B−05, STYLE 4
SO−16
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
P
D
T
J
, T
stg
−55
to +150
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage
(1)
(I
C
=
−10
mAdc, I
B
= 0)
Collector
−Base
Breakdown Voltage
(I
C
=
−10
mAdc,
I
E
= 0)
Emitter
−Base
Breakdown Voltage
(I
E
=
−10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
=
−30
Vdc, I
E
= 0)
Emitter Cutoff Current
(V
EB
=
−3.0
Vdc, I
C
= 0)
1. Pulse Test: Pulse Width
v
300
ms;
Duty Cycle
v
2.0%.
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
−40
−40
−5.0
−200
−200
Vdc
Vdc
Vdc
nAdc
nAdc
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
©
Semiconductor Components Industries, LLC, 2006
August, 2006
Rev. 4
1
Publication Order Number:
MMPQ3467/D

MMPQ3467R1 Related Products

MMPQ3467R1 MMPQ3467G MMPQ3467R2
Description 1A, 40V, 4 CHANNEL, PNP, Si, POWER TRANSISTOR, CASE 751B-05, SOP-16 1A, 40V, 4 CHANNEL, PNP, Si, POWER TRANSISTOR, CASE 751B-05, SOP-16 1A, 40V, 4 CHANNEL, PNP, Si, POWER TRANSISTOR, CASE 751B-05, SOP-16
Is it Rohs certified? incompatible conform to incompatible
Maker ON Semiconductor ON Semiconductor ON Semiconductor
Parts packaging code SOIC SOIC SOIC
package instruction SMALL OUTLINE, R-PDSO-G16 CASE 751B-05, SOP-16 SMALL OUTLINE, R-PDSO-G16
Contacts 16 16 16
Manufacturer packaging code CASE 751B-05 CASE 751B-05 CASE 751B-05
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Is Samacsys N N N
Maximum collector current (IC) 1 A 1 A 1 A
Collector-emitter maximum voltage 40 V 40 V 40 V
Configuration SEPARATE, 4 ELEMENTS SEPARATE, 4 ELEMENTS SEPARATE, 4 ELEMENTS
Minimum DC current gain (hFE) 20 20 20
JESD-30 code R-PDSO-G16 R-PDSO-G16 R-PDSO-G16
Number of components 4 4 4
Number of terminals 16 16 16
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 190 MHz 190 MHz 190 MHz
Base Number Matches 1 1 1
JESD-609 code e0 - e0
Terminal surface TIN LEAD - TIN LEAD
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