SRAM Module, 256KX8, 150ns, CMOS, CDMA32, CERDIP-32
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | B&B Electronics Manufacturing Company |
Parts packaging code | MODULE |
package instruction | DIP, DIP32,.6 |
Contacts | 32 |
Reach Compliance Code | unknown |
ECCN code | 3A991.B.2.A |
Is Samacsys | N |
Maximum access time | 150 ns |
I/O type | COMMON |
JESD-30 code | R-CDMA-T32 |
JESD-609 code | e0 |
memory density | 2097152 bit |
Memory IC Type | SRAM MODULE |
memory width | 8 |
Number of functions | 1 |
Number of ports | 1 |
Number of terminals | 32 |
word count | 262144 words |
character code | 256000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 256KX8 |
Output characteristics | 3-STATE |
Exportable | YES |
Package body material | CERAMIC, METAL-SEALED COFIRED |
encapsulated code | DIP |
Encapsulate equivalent code | DIP32,.6 |
Package shape | RECTANGULAR |
Package form | MICROELECTRONIC ASSEMBLY |
Parallel/Serial | PARALLEL |
power supply | 5 V |
Certification status | Not Qualified |
Maximum standby current | 0.00004 A |
Minimum standby current | 2 V |
Maximum slew rate | 0.095 mA |
Maximum supply voltage (Vsup) | 5.5 V |
Minimum supply voltage (Vsup) | 4.5 V |
Nominal supply voltage (Vsup) | 5 V |
surface mount | NO |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE |
Terminal pitch | 2.54 mm |
Terminal location | DUAL |
Base Number Matches | 1 |