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SXA-389BZ

Description
Wide Band Medium Power Amplifier, 400MHz Min, 2500MHz Max, 1 Func, BIPolar, GREEN, PLASTIC, SOT-89, 4 PIN
CategoryWireless rf/communication    Radio frequency and microwave   
File Size628KB,10 Pages
ManufacturerQorvo
Websitehttps://www.qorvo.com
Environmental Compliance
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SXA-389BZ Overview

Wide Band Medium Power Amplifier, 400MHz Min, 2500MHz Max, 1 Func, BIPolar, GREEN, PLASTIC, SOT-89, 4 PIN

SXA-389BZ Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerQorvo
package instructionTO-243
Reach Compliance Codecompliant
ECCN code5A991.G
Is SamacsysN
Characteristic impedance50 Ω
structureCOMPONENT
Gain12.5 dB
Maximum input power (CW)20 dBm
JESD-609 codee3
Installation featuresSURFACE MOUNT
Number of functions1
Number of terminals3
Maximum operating frequency2500 MHz
Minimum operating frequency400 MHz
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Encapsulate equivalent codeTO-243
power supply5 V
RF/Microwave Device TypesWIDE BAND MEDIUM POWER
Maximum slew rate135 mA
surface mountYES
technologyBIPOLAR
Terminal surfaceTin (Sn)
Maximum voltage standing wave ratio2
Base Number Matches1
SXA-389B(Z)
400MHz to
2500MHz
¼W Medium
Power GaAs
HBT Amplifier
With Active
Bias
SXA-389B(Z)
400MHz to 2500MHz ¼W MEDIUM POWER
GaAs HBT AMPLIFIER WITH ACTIVE BIAS
Package: SOT-89
Product Description
RFMD’s SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipo-
lar Transistor (HBT) MMIC housed in low-cost surface mountable plastic
package. These HBT MMICs are fabricated using molecular beam epitaxial
growth technology which produces reliable and consistent performance
from wafer to wafer and lot to lot. These amplifiers are specially designed
for use as driver devices for infrastructure equipment in the 400 MHz to
2500 MHz cellular, ISM, WLL, PCS, WCDMA applications. Its high linearity
makes it an ideal choice for multi-carrier as well as digital applications.
Features
Available in RFMD Green, RoHS
Compliant, and Pb-Free (Z Part
Number)
Lower R
TH
for increased MTTF
10
8
Hours at T
Lead
=85°C
On-Chip Active Bias Control, Sin-
gle 5V Supply
Excellent Linearity:+43dBm Typ.
OIP
3
at 1960MHz
High P
1dB
:+25dBm Typ.
High Gain:+18.5dB at 850MHz
Efficient: Consumes Only
575mW
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
dBm
Typical OIP
3
, P1dB, Gain
Si BiCMOS
50
45
40
35
30
25
20
15
10
5
0
850 MHz
1960 MHz
2140 MHz
OIP3
P1dB
Gain
Applications
W-CDMA, PCS, Cellular Systems
Multi-Carrier Applications
2450 MHz
Parameter
Small Signal Gain
Min.
12.5
Specification
Typ.
18.4
13.6
13.5
12.8
25.0
25.0
25.0
25.0
41.0
43.0
42.0
41.0
4.5
4.8
5.0
5.7
1.2:1
1.3:1
1.2:1
1.2:1
575.0
115
70
Max.
15.0
Unit
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
dB
Condition
850MHz
1960MHz
2140MHz
2450MHz
850MHz
1960MHz
2140MHz
2450MHz
850MHz, P
OUT
per tone=+11dBm, Tone
Spacing=1MHz
1960MHz
2140MHz
2450MHz
850MHz
1960MHz
2140MHz
2450MHz
850MHz
1960MHz
2140MHz
2450MHz
V
CC
=5V
junction to backside
Output Power at 1dB Compression
24.0
Output Third Order Intercept Point
39.0
Noise Figure
6.3
Input VSWR
2.0:1
Operating Dissipated Power
Device Operating Current
Thermal Resistance
90
135
mW
mA
°C/W
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS100712
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 10

SXA-389BZ Related Products

SXA-389BZ SXA-389B
Description Wide Band Medium Power Amplifier, 400MHz Min, 2500MHz Max, 1 Func, BIPolar, GREEN, PLASTIC, SOT-89, 4 PIN Wide Band Medium Power Amplifier, 400MHz Min, 2500MHz Max, 1 Func, BIPolar, PLASTIC, SOT-89, 3 PIN
Is it Rohs certified? conform to incompatible
Maker Qorvo Qorvo
package instruction TO-243 TO-243
Reach Compliance Code compliant unknown
Is Samacsys N N
Characteristic impedance 50 Ω 50 Ω
structure COMPONENT COMPONENT
Gain 12.5 dB 12.5 dB
Maximum input power (CW) 20 dBm 20 dBm
JESD-609 code e3 e0
Installation features SURFACE MOUNT SURFACE MOUNT
Number of functions 1 1
Number of terminals 3 3
Maximum operating frequency 2500 MHz 2500 MHz
Minimum operating frequency 400 MHz 400 MHz
Maximum operating temperature 85 °C 85 °C
Minimum operating temperature -40 °C -40 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Encapsulate equivalent code TO-243 TO-243
power supply 5 V 5 V
RF/Microwave Device Types WIDE BAND MEDIUM POWER WIDE BAND MEDIUM POWER
Maximum slew rate 135 mA 135 mA
surface mount YES YES
technology BIPOLAR BIPOLAR
Terminal surface Tin (Sn) Tin/Lead (Sn/Pb)
Maximum voltage standing wave ratio 2 2
Base Number Matches 1 1

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