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MSPLCE51AE3TR

Description
Trans Voltage Suppressor Diode, 1500W, 51V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC, CASE 1, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size225KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
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MSPLCE51AE3TR Overview

Trans Voltage Suppressor Diode, 1500W, 51V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC, CASE 1, 2 PIN

MSPLCE51AE3TR Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Objectid1619557198
package instructionO-PALF-W2
Contacts2
Manufacturer packaging codeCASE 1
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum breakdown voltage62.7 V
Minimum breakdown voltage56.7 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PALF-W2
JESD-609 codee3
Maximum non-repetitive peak reverse power dissipation1500 W
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation1.52 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage51 V
surface mountNO
technologyAVALANCHE
Terminal surfaceMATTE TIN
Terminal formWIRE
Terminal locationAXIAL
LCE6.5 thru LCE170A, e3
1500 WATT LOW CAPACITANCE
TRANSIENT VOLTAGE SUPPRESSOR
SCOTTSDALE DIVISION
DESCRIPTION
This Transient Voltage Suppressor (TVS) product family includes a rectifier
diode element in series and opposite direction to achieve low capacitance
performance below 100 pF (see Figure 2). The low level of TVS capacitance
may be used for protecting higher frequency applications in inductive
switching environments or electrical systems involving secondary lightning
effects per IEC61000-4-5 as well as RTCA/DO-160D or ARINC 429 for
airborne avionics. With virtually instantaneous response, they also protect
from ESD and EFT per IEC61000-4-2 and IEC61000-4-4. If bipolar transient
capability is required, two of these low capacitance TVS devices may be used
in parallel in opposite directions (anti
-
parallel) for complete ac protection as
shown in Figure 4.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
CASE 1
FEATURES
Unidirectional low-capacitance TVS (for bidirectional see
Figure 4)
Economical plastic encapsulated TVS series for thru-
hole mounting
Suppresses transients up to 1500 watts @ 10/1000 µs
(see Figure 1)*
Clamps transient in less than 100 pico seconds
Working voltage (V
WM
) range 6.5 V to 170 V
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, JANTXV, and JANS are also
available by adding MQ, MX, MV, MSP prefixes
respectively to part numbers, e.g. MXLCE6.5A,
MVLCE45A, etc.
Surface mount equivalent packages also available as
SMCJLCE6.5 - SMCJLCE170A or SMCGLCE6.5 -
SMCGLCE170A in separate data sheet (consult factory
for other surface mount options)
RoHS Compliant devices available by adding “e3” suffix
Metal hermetically sealed DO-13 axial-leaded
equivalents available in the LC6.5 - LC170A series in
separate data sheet
APPLICATIONS / BENEFITS
Protection from switching transients and induced RF
Low capacitance for data line protection to 1 MHz
Protection for aircraft fast data rate lines up to Level 5
Waveform 4 and Level 2 Waveform 5A in RTCA/DO-
160D (also see MicroNote 130) & ARINC 429 with bit
rates of 100 kb/s (per ARINC 429, Part 1, par 2.4.1.1)
Protection from ESD and EFT per IEC 61000-4-2 and
IEC 61000-4-4
Secondary lightning protection per IEC61000-4-5 with
42 Ohms source impedance:
Class 1:
Class 2:
Class 3:
Class 4:
LCE6.5 to LCE170A
LCE6.5 to LCE150A
LCE6.5 to LCE70A
LCE6.5 to LCE36A
Secondary lightning protection per IEC61000-4-5 with
12 Ohms source impedance:
Class 1 :
Class 2:
Class 3:
Class 4:
LCE6.5
LCE6.5
LCE6.5
LCE6.5
to LCE90A
to LCE45 A
to LCE22A
to LCE11A
Secondary lightning protection per IEC61000-4-5 with
2 Ohms source impedance:
Class 2: LCE6.5 to LCE20A
Class 3: LCE6.5 to LCE10A
MAXIMUM RATINGS
1500 Watts for 10/1000
μs
with repetition rate of 0.01% or
o
less*
at lead temperature (T
L
) 25 C (See Figs. 1, 2, & 4)
Operating & Storage Temperatures: -65
o
to +150
o
C
Thermal Resistance: 22
º
C/W junction to lead at 3/8
inch (10 mm) from body, or 82
º
C/W junction to ambient
2
when mounted on FR4 PC board with 4 mm copper
pads (1oz) and track width 1 mm, length 25 mm
Steady-State Power dissipation*: 5 watts at T
L
= 40
o
C,
or 1.52 watts at T
A
= 25
º
C when mounted on FR4 PC
board described for thermal resistance
Solder Temperatures: 260
o
C for 10 s (maximum)
MECHANICAL AND PACKAGING
CASE: Void-free transfer molded thermosetting
epoxy body meeting UL94V-0
TERMINATIONS: Tin-lead or RoHS Compliant
annealed matte-Tin plating readily solderable per
MIL-STD-750 method 2026
POLARITY: Cathode indicated by band
MARKING: Part number and polarity band
WEIGHT: 1.5 grams. (Approx)
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
See “CASE 1” package dimensions on last page
LCE6.5 thru LCE170A, e3
*
TVS devices are not typically used for dc power dissipation and are instead operated < V
WM
(rated standoff voltage) except for transients that briefly
drive the device into avalanche breakdown (V
BR
to V
C
region) of the TVS element. Also see Figures 3 and 4 for further protection details in rated peak
pulse power for unidirectional and bidirectional configurations respectively.
Copyright
©
2008
10-29-2008 REV F
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1

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