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NAND01GR4B2CN6E

Description
256M X 8 FLASH 3V PROM, 25000 ns, PDSO48
Categorystorage    storage   
File Size506KB,62 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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NAND01GR4B2CN6E Overview

256M X 8 FLASH 3V PROM, 25000 ns, PDSO48

NAND01GR4B2CN6E Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeTSOP
package instruction12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48
Contacts48
Reach Compliance Codecompli
ECCN code3A991.B.1.A
Is SamacsysN
Maximum access time25000 ns
JESD-30 codeR-PDSO-G48
JESD-609 codee3
length18.4 mm
memory density1073741824 bi
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals48
word count67108864 words
character code64000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize64MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Programming voltage1.8 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
typeNAND TYPE
width12 mm
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