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NAND01GW3B2CN1

Description
128M X 8 FLASH 3V PROM, 35 ns, PDSO48
Categorystorage    storage   
File Size402KB,64 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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NAND01GW3B2CN1 Overview

128M X 8 FLASH 3V PROM, 35 ns, PDSO48

NAND01GW3B2CN1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
Parts packaging codeTSOP
package instructionTSOP1,
Contacts48
Reach Compliance Codecompli
ECCN code3A991.B.1.A
Maximum access time35 ns
JESD-30 codeR-PDSO-G48
JESD-609 codee0
length18.4 mm
memory density1073741824 bi
Memory IC TypeFLASH
memory width8
Number of functions1
Number of terminals48
word count134217728 words
character code128000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize128MX8
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width12 mm

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