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NAND02GW3B2AZA6

Description
128M X 8 FLASH 3V PROM, 35 ns, PDSO48
Categorystorage   
File Size402KB,64 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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NAND02GW3B2AZA6 Overview

128M X 8 FLASH 3V PROM, 35 ns, PDSO48

NAND02GW3B2AZA6 Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals48
Minimum operating temperature-40 Cel
Maximum operating temperature85 Cel
Rated supply voltage3 V
Minimum supply/operating voltage2.7 V
Maximum supply/operating voltage3.6 V
Processing package description12 X 20 MM, PLASTIC, TSOP-48
stateContact Mfr
ccess_time_max35 ns
jesd_30_codeR-PDSO-G48
jesd_609_codee0
storage density1.02E9 bit
Memory IC typeFLASH
memory width8
moisture_sensitivity_levelNOT SPECIFIED
Number of digits1.28E8 words
Number of digits128M
operating modeASYNCHRONOUS
organize128MX8
Packaging MaterialsPLASTIC/EPOXY
ckage_codeTSOP1
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE, THIN PROFILE
serial parallelPARALLEL
eak_reflow_temperature__cel_NOT SPECIFIED
gramming_voltage__v_3
qualification_statusCOMMERCIAL
seated_height_max1.2 mm
surface mountYES
Temperature levelINDUSTRIAL
terminal coatingTIN LEAD
Terminal formGULL WING
Terminal spacing0.5000 mm
Terminal locationDUAL
ime_peak_reflow_temperature_max__s_NOT SPECIFIED
length18.4 mm
width12 mm
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