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NAND02GW4B2BZA1F

Description
256M X 8 FLASH 3V PROM, 25000 ns, PDSO48
Categorystorage   
File Size506KB,62 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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NAND02GW4B2BZA1F Overview

256M X 8 FLASH 3V PROM, 25000 ns, PDSO48

NAND02GW4B2BZA1F Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals48
Maximum operating temperature85 Cel
Minimum operating temperature-40 Cel
Maximum supply/operating voltage3.6 V
Minimum supply/operating voltage2.7 V
Rated supply voltage3 V
maximum access time25000 ns
Processing package description12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48
Lead-freeYes
EU RoHS regulationsYes
stateTRANSFERRED
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE, THIN PROFILE
surface mountYes
Terminal formGULL WING
Terminal spacing0.5000 mm
terminal coatingTIN/TIN BISMUTH
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
Temperature levelINDUSTRIAL
memory width8
organize256M X 8
storage density2.15E9 deg
operating modeASYNCHRONOUS
Number of digits2.68E8 words
Number of digits256M
Memory IC typeFLASH 3V PROM
serial parallelPARALLEL

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