CHONGQING PINGYANG ELECTRONICS CO.,LTD.
1N4001 THRU 1N4007
TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER
VOLTAGE：50-1000V
CURRENT：1.0A
FEATURES
·High
reliability
·Low
leakage
·Low
forward voltage drop
·High
current capability
DO-41
1.0(25.4)
MIN.
.205(5.2)
.166(4.2)
.034(0.9)
.028(0.7)
DIA.
DIA.
MECHANICAL DATA
·Case:
Molded plastic
·Epoxy:
UL94V-0 rate flame retardant
·Lead:
MIL-STD- 202E, Method 208 guaranteed
·Polarity:Color
band denotes cathode end
·Mounting
position:
Any
·Weight:
0.33 grams
.107(2.7)
.080(2.0)
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007
units
V
V
V
A
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward rectified Current
at T
A
=75°C
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC
method)
Maximum Instantaneous forward Voltage at 1.0A
DC
@ T
A
=25°C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@ T
A
=100°C
Maximum Full Load Reverse Current Average
Full Cycle .375”(9.5mm) lead length at T
L
=75°C
Typical Junction Capacitance (Note)
Typical Thermal Resistance
Notes:
V
RRM
V
RMS
V
DC
I
o
50
35
50
100
70
100
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
1000
I
FSM
V
F
30
1.1
5.0
A
V
I
R
500
30
µA
C
J
R
θJA
15
50
pF
°C/W
Measured at 1MHz and applied reverse voltage of 4.0 volts
１
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