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1N3296A

Description
Rectifier Diode, 1 Phase, 1 Element, 100A, 1200V V(RRM), Silicon, DO-8,
CategoryDiscrete semiconductor    diode   
File Size383KB,4 Pages
ManufacturerSemitronics Corp.
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1N3296A Overview

Rectifier Diode, 1 Phase, 1 Element, 100A, 1200V V(RRM), Silicon, DO-8,

1N3296A Parametric

Parameter NameAttribute value
MakerSemitronics Corp.
Reach Compliance Codeunknown
Is SamacsysN
applicationPOWER
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.25 V
JEDEC-95 codeDO-8
JESD-30 codeO-MUPM-H1
Maximum non-repetitive peak forward current2300 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature200 °C
Maximum output current100 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1200 V
surface mountNO
Terminal formHIGH CURRENT CABLE
Terminal locationUPPER
Base Number Matches1

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