Rectifier Diode, 1 Phase, 1 Element, 100A, 1200V V(RRM), Silicon, DO-8,
Parameter Name | Attribute value |
Maker | Semitronics Corp. |
Reach Compliance Code | unknown |
Is Samacsys | N |
application | POWER |
Shell connection | CATHODE |
Configuration | SINGLE |
Diode component materials | SILICON |
Diode type | RECTIFIER DIODE |
Maximum forward voltage (VF) | 1.25 V |
JEDEC-95 code | DO-8 |
JESD-30 code | O-MUPM-H1 |
Maximum non-repetitive peak forward current | 2300 A |
Number of components | 1 |
Phase | 1 |
Number of terminals | 1 |
Maximum operating temperature | 200 °C |
Maximum output current | 100 A |
Package body material | METAL |
Package shape | ROUND |
Package form | POST/STUD MOUNT |
Certification status | Not Qualified |
Maximum repetitive peak reverse voltage | 1200 V |
surface mount | NO |
Terminal form | HIGH CURRENT CABLE |
Terminal location | UPPER |
Base Number Matches | 1 |