Rectifier Diode, 1 Phase, 1 Element, 50A, 200V V(RRM), Silicon, DO-5, DO-5, 1 PIN
Parameter Name | Attribute value |
Maker | Microsemi |
package instruction | O-MUPM-D1 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Is Samacsys | N |
application | FAST RECOVERY POWER |
Shell connection | ANODE |
Configuration | SINGLE |
Diode component materials | SILICON |
Diode type | RECTIFIER DIODE |
Maximum forward voltage (VF) | 2.75 V |
JEDEC-95 code | DO-5 |
JESD-30 code | O-MUPM-D1 |
Maximum non-repetitive peak forward current | 400 A |
Number of components | 1 |
Phase | 1 |
Number of terminals | 1 |
Maximum operating temperature | 150 °C |
Minimum operating temperature | -65 °C |
Maximum output current | 50 A |
Package body material | METAL |
Package shape | ROUND |
Package form | POST/STUD MOUNT |
Certification status | Not Qualified |
Guideline | MIL-19500/308C |
Maximum repetitive peak reverse voltage | 200 V |
Maximum reverse current | 15 µA |
Maximum reverse recovery time | 0.15 µs |
surface mount | NO |
Terminal form | SOLDER LUG |
Terminal location | UPPER |
Base Number Matches | 1 |
JANTXV1N3911ARE3 | 500P31B222NL3H | JANTX1N3911AE3 | |
---|---|---|---|
Description | Rectifier Diode, 1 Phase, 1 Element, 50A, 200V V(RRM), Silicon, DO-5, DO-5, 1 PIN | Ceramic Capacitor, Ceramic, 50V, 30% +Tol, 30% -Tol, BX, -/+15ppm/Cel TC, 0.0022uF, | Rectifier Diode, 1 Phase, 1 Element, 50A, 200V V(RRM), Silicon, DO-5, DO-5, 1 PIN |
package instruction | O-MUPM-D1 | , | O-MUPM-D1 |
Reach Compliance Code | compliant | compliant | compliant |
ECCN code | EAR99 | EAR99 | EAR99 |
Number of terminals | 1 | 2 | 1 |
Maximum operating temperature | 150 °C | 125 °C | 150 °C |
Minimum operating temperature | -65 °C | -55 °C | -65 °C |
Package form | POST/STUD MOUNT | SMT | POST/STUD MOUNT |
Maker | Microsemi | - | Microsemi |
Is Samacsys | N | - | N |
application | FAST RECOVERY POWER | - | FAST RECOVERY POWER |
Shell connection | ANODE | - | CATHODE |
Configuration | SINGLE | - | SINGLE |
Diode component materials | SILICON | - | SILICON |
Diode type | RECTIFIER DIODE | - | RECTIFIER DIODE |
Maximum forward voltage (VF) | 2.75 V | - | 2.75 V |
JEDEC-95 code | DO-5 | - | DO-5 |
JESD-30 code | O-MUPM-D1 | - | O-MUPM-D1 |
Maximum non-repetitive peak forward current | 400 A | - | 400 A |
Number of components | 1 | - | 1 |
Phase | 1 | - | 1 |
Maximum output current | 50 A | - | 50 A |
Package body material | METAL | - | METAL |
Package shape | ROUND | - | ROUND |
Certification status | Not Qualified | - | Not Qualified |
Guideline | MIL-19500/308C | - | MIL-19500/308C |
Maximum repetitive peak reverse voltage | 200 V | - | 200 V |
Maximum reverse current | 15 µA | - | 15 µA |
Maximum reverse recovery time | 0.15 µs | - | 0.15 µs |
surface mount | NO | - | NO |
Terminal form | SOLDER LUG | - | SOLDER LUG |
Terminal location | UPPER | - | UPPER |
Base Number Matches | 1 | - | 1 |