U1J4B42TE24R datasheet, PDF - EEWORLD Datasheet

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U1J4B42TE24R: DescriptionDIODE 1 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, Bridge Rectifier Diode; CategoryDiscrete semiconductor diode; File Size45KB，2 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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U1J4B42TE24R Overview

DIODE 1 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, Bridge Rectifier Diode

U1J4B42TE24R Parametric

Parameter Name	Attribute value
Maker	Toshiba Semiconductor
package instruction	R-PDSO-G4
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
JESD-30 code	R-PDSO-G4
Maximum non-repetitive peak forward current	33 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-40 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	600 V
Maximum reverse current	0.00001 µA
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Base Number Matches	1

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U1J4B42TE24R Related Products

	U1J4B42TE24R	JB6-P208-21-8	U1G4B42TE24L	U1J4B42TE24L	U1B4B42TE24L	U1B4B42TE24R
Description	DIODE 1 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, Bridge Rectifier Diode	Terminal and Terminal Block,	DIODE 1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE, Bridge Rectifier Diode	DIODE 1 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, Bridge Rectifier Diode	DIODE 1 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE, Bridge Rectifier Diode	DIODE 1 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE, Bridge Rectifier Diode
Reach Compliance Code	unknown	compliant	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maker	Toshiba Semiconductor	-	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor
package instruction	R-PDSO-G4	-	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
Configuration	BRIDGE, 4 ELEMENTS	-	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON	-	SILICON	SILICON	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	-	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1 V	-	1 V	1 V	1 V	1 V
JESD-30 code	R-PDSO-G4	-	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
Maximum non-repetitive peak forward current	33 A	-	33 A	33 A	33 A	33 A
Number of components	4	-	4	4	4	4
Phase	1	-	1	1	1	1
Number of terminals	4	-	4	4	4	4
Maximum operating temperature	150 °C	-	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-40 °C	-	-40 °C	-40 °C	-40 °C	-40 °C
Maximum output current	1 A	-	1 A	1 A	1 A	1 A
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	600 V	-	400 V	600 V	100 V	100 V
Maximum reverse current	0.00001 µA	-	0.00001 µA	0.00001 µA	0.00001 µA	0.00001 µA
surface mount	YES	-	YES	YES	YES	YES
Terminal form	GULL WING	-	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	-	DUAL	DUAL	DUAL	DUAL

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