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1N415F

Description
SILICON,XBAND, MIXER DIODE
CategoryDiscrete semiconductor    diode   
File Size257KB,7 Pages
ManufacturerTE Connectivity
Websitehttp://www.te.com
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1N415F Overview

SILICON,XBAND, MIXER DIODE

1N415F Parametric

Parameter NameAttribute value
MakerTE Connectivity
package instructionO-MUMW-N1
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Other featuresLOW NOISE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeMIXER DIODE
frequency bandX BAND
JESD-30 codeO-MUMW-N1
maximum noise index7 dB
Number of components1
Number of terminals1
Package body materialMETAL
Package shapeROUND
Package formMICROWAVE
Pulse input maximum power0.075 W
Minimum pulse input power1 W
Certification statusNot Qualified
surface mountYES
technologyPOINT CONTACT
Terminal formNO LEAD
Terminal locationUPPER
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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