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NX8341UB-AZ

Description
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
File Size248KB,13 Pages
ManufacturerCEL
Websitehttp://www.cel.com/
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NX8341UB-AZ Overview

1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

LASER DIODE
NX8341 Series
1 310 nm AlGaInAs MQW-DFB LASER DIODE
FOR 10 Gb/s APPLICATION
DESCRIPTION
The NX8341 Series is a 1 310 nm Multiple Quantum Well (MQW)
structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical
subassembly) with InGaAs monitor PIN-PD in a receptacle type package
designed for XENPAK/XPAK/X2/XFP transceiver.
APPLICATIONS
• 10 G BASE-LW/LR
• 10 G Fiber Channel
FEATURES
• Internal optical isolator
• Optical output power
• Low threshold current
• Wide operating temperature range
• InGaAs monitor PIN-PD
P
f
=
−2
dBm
l
th
= 8 mA TYP. @ T
C
= 25°C
T
C
=
−5
to +85°C
Document No. PL10525EJ02V0DS (2nd edition)
Date Published September 2006 NS CP(K)
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

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Description 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

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