P800K datasheet, PDF - EEWORLD Datasheet

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P800K: DescriptionSILICON RECTIFIER DIODES; CategoryDiscrete semiconductor diode; File Size33KB，2 Pages; ManufacturerEIC [EIC discrete Semiconductors]; Environmental Compliance

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P800K Overview

SILICON RECTIFIER DIODES

P800K Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	EIC [EIC discrete Semiconductors]
Reach Compliance Code	compli
Other features	HIGH RELIABILITY
application	GENERAL PURPOSE
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	400 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-50 °C
Maximum output current	8 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	800 V
Maximum reverse current	5 µA
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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P800A - P800K

PRV : 50 - 800 Volts

Io : 8.0 Amperes

FEATURES :

High current capability

High surge current capability

High reliability

Low reverse current

Low forward voltage drop

Pb / RoHS Free

SILICON RECTIFIER DIODES

0.360 (9.1)

0.340 (8.6)

1.00 (25.4)

MIN.

0.360 (9.1)

0.340 (8.6)

MECHANICAL DATA :

* Case : Void-free molded plastic body

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

* Polarity : Color band denotes cathode end

* Mounting position : Any

* Weight : 2.1 grams

Rating at 25

C ambient temperature unless otherwise specified.

0.052 (1.32)

0.048 (1.22)

1.00 (25.4)

MIN.

Dimensions in inches and ( millimeters )

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

RATING

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Current

0.375"(9.5mm) Lead Length Ta = 50

°C

Peak Forward Surge Current

8.3ms Single half sine wave Superimposed on

rated load (JEDEC Method)

Maximum Instantaneous Forward Voltage at I

= 8 A

Maximum DC Reverse Current

at rated DC Blocking Voltage

Ta = 25

°C

Ta = 100

°C

SYMBOL

RRM

RMS

F(AV)

FSM

R(H)

STG

P800A

P800B

P800D

P800G

P800J

P800K

UNIT

µA

°C/W

°C

100

200

140

200

8.0

400

1.0

5.0

1.0

150

400

280

400

600

420

600

800

560

800

Typical junction capacitance at 4.0V, 1MHz

Typical Thermal Resistance (1)

Junction Temperature Range

Storage Temperature Range

- 50 to + 150

Note :

(1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5mm) lead length,

P.C.B. mounted with 1.1” x 1.1” (30 x 30mm) copper pads

Page 1 of 2

Rev. 02 : March 25, 2005

P800K Related Products

	P800K	P800A	P800B	P800D	P800G	P800J
Description	SILICON RECTIFIER DIODES	SILICON RECTIFIER DIODES	SILICON RECTIFIER DIODES	SILICON RECTIFIER DIODES	SILICON RECTIFIER DIODES	SILICON RECTIFIER DIODES
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
Maker	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]
Reach Compliance Code	compli	compli	compli	compli	compli	compli
Other features	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
application	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V	1 V	1 V	1 V	1 V	1 V
JESD-30 code	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Maximum non-repetitive peak forward current	400 A	400 A	400 A	400 A	400 A	400 A
Number of components	1	1	1	1	1	1
Phase	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-50 °C	-50 °C	-50 °C	-50 °C	-50 °C	-50 °C
Maximum output current	8 A	8 A	8 A	8 A	8 A	8 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maximum repetitive peak reverse voltage	800 V	50 V	100 V	200 V	400 V	600 V
Maximum reverse current	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA
surface mount	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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