PHD63NQ03LT datasheet, PDF - EEWORLD Datasheet

PHD63NQ03LT: DescriptionTRANSISTOR 68.9 A, 30 V, 0.0177 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3, FET General Purpose Power; CategoryDiscrete semiconductor The transistor; File Size268KB，14 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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PHD63NQ03LT Overview

TRANSISTOR 68.9 A, 30 V, 0.0177 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3, FET General Purpose Power

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	NXP
Parts packaging code	TO-252
package instruction	PLASTIC, SC-63, DPAK-3
Contacts	3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Is Samacsys	N
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	68.9 A
Maximum drain current (ID)	68.9 A
Maximum drain-source on-resistance	0.0177 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	111 W
Maximum pulsed drain current (IDM)	240 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

	PHD63NQ03LT	PHB63NQ03LT
Description	TRANSISTOR 68.9 A, 30 V, 0.0177 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3, FET General Purpose Power	68.9A, 30V, 0.0177ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3
Maker	NXP	NXP
package instruction	PLASTIC, SC-63, DPAK-3	PLASTIC, D2PAK-3
Contacts	3	3
Reach Compliance Code	not_compliant	compliant
ECCN code	EAR99	EAR99
Is Samacsys	N	N
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V	30 V
Maximum drain current (Abs) (ID)	68.9 A	68.9 A
Maximum drain current (ID)	68.9 A	68.9 A
Maximum drain-source on-resistance	0.0177 Ω	0.0177 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2	R-PSSO-G2
Number of components	1	1
Number of terminals	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	111 W	111 W
Maximum pulsed drain current (IDM)	240 A	240 A
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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