1N5059 datasheet, PDF - EEWORLD Datasheet

1N5059: DescriptionSILICON, SIGNAL DIODE; CategoryDiscrete semiconductor diode; File Size84KB，3 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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SILICON, SIGNAL DIODE

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Renesas Electronics Corporation
Reach Compliance Code	not_compliant
ECCN code	EAR99
Is Samacsys	N
Other features	TRANSIENT VOLTAGE PROTECTED
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JESD-30 code	O-LALF-W2
JESD-609 code	e0
Maximum non-repetitive peak forward current	50 A
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	2 A
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	200 V
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

	1N5059	1N5061
Description	SILICON, SIGNAL DIODE	RECTIFIER DIODE,600V V(RRM),DO-204AP
Is it Rohs certified?	incompatible	incompatible
Maker	Renesas Electronics Corporation	Renesas Electronics Corporation
Reach Compliance Code	not_compliant	not_compliant
Configuration	SINGLE	SINGLE
Diode type	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V	1.2 V
JESD-609 code	e0	e0
Maximum non-repetitive peak forward current	50 A	50 A
Number of components	1	1
Maximum operating temperature	175 °C	150 °C
Maximum output current	2 A	2 A
Maximum repetitive peak reverse voltage	200 V	600 V
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)

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