CS45N06A3 datasheet, PDF - EEWORLD Datasheet

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CS45N06A3: DescriptionPower device_MOSFET_12V-300V NMOS; CategoryMOSFET; File Size504KB，10 Pages; ManufacturerCRMICRO; Websitehttps://www.crmicro.com/; The company takes power semiconductor devices and power/analog integrated circuits as its industrial foundation, and targets the industrial electronics, consumer electronics, automotive electronics, and 5G communications markets. It has technology development and manufacturing platforms for power devices, GaN, MEMS sensors, etc., and can provide high-reliability power devices, modules and other products and application solutions. The low-voltage, medium-voltage and high-voltage power device products developed by the company can be widely used in electric vehicles, solar energy, automotive electronics, mobile phone fast charging, white appliances, general switches, power supplies and other industries.

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CS45N06A3 Overview

Power device_MOSFET_12V-300V NMOS

CS45N06A3 Parametric

Parameter Name	Attribute value
PARTNUMBER	CS45N06A3
PACKAGE	TO-251
POLARITY	N
VDS	60
IDA	45
VTYPE10	12
VMAX10	16
VTYPE45	15
VMAX45	20
VGSMIN	1
VGSMAX	2
QGNC	43.45
CISSPF	1876
CRTIME	202006
RN	57

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Silicon

N-Channel

Power

MOSFET

○

CS45N06 A3

General Description

：

CS45N06 A3, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the high density Trench

technology which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. This device is

suitable for use as a load switch and PWM applications. The

package form is TO-251, which accords with the RoHS standard.

DSS

DS(ON)Typ

mΩ

Features：

Fast Switching

Low ON Resistance

(Rdson≤16mΩ)

Low Gate Charge

Low Reverse transfer capacitances

100% Single Pulse avalanche energy Test

Applications

：

Power switch circuit of adaptor and charger;

LED backlight driver;

Synchronous rectification

Absolute

（T

= 25℃ unless otherwise specified）

Symbol

DSS

Parameter

Drain-to-Source Voltage

Continuous Drain Current

= 25℃

Continuous Drain Current T

= 100

°C

Pulsed Drain Current

= 25℃

Gate-to-Source Voltage

Rating

180

±20

121

54.3

0.43

150，–55 to 150

300

Units

W/℃

℃

，T

stg

Avalanche Energy

Power Dissipation T

= 25

°C

Derating Factor above 25°C

Operating Junction and Storage Temperature Range

MaximumTemperature for Soldering

W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .

Pag e 1 of 7

2018V01

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