FDS3572_NL datasheet, PDF - EEWORLD Datasheet

FDS3572_NL: Description8.9A, 80V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, SO-8; CategoryThe transistor; File Size1MB，12 Pages; ManufacturerRochester Electronics; Websitehttps://www.rocelec.com/

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FDS3572_NL Overview

8.9A, 80V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, SO-8

Parameter Name	Attribute value
Maker	Rochester Electronics
Parts packaging code	SOT
package instruction	LEAD FREE, SO-8
Contacts	8
Reach Compliance Code	unknown
Is Samacsys	N
Avalanche Energy Efficiency Rating (Eas)	515 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	80 V
Maximum drain current (ID)	8.9 A
Maximum drain-source on-resistance	0.016 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8
Number of components	1
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Certification status	COMMERCIAL
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

	FDS3572_NL	FDS3572
Description	8.9A, 80V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, SO-8	8.9A, 80V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, SO-8
Maker	Rochester Electronics	Rochester Electronics
Parts packaging code	SOT	SOT
package instruction	LEAD FREE, SO-8	SO-8
Contacts	8	8
Reach Compliance Code	unknown	unknown
Is Samacsys	N	N
Avalanche Energy Efficiency Rating (Eas)	515 mJ	515 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	80 V	80 V
Maximum drain current (ID)	8.9 A	8.9 A
Maximum drain-source on-resistance	0.016 Ω	0.016 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8	R-PDSO-G8
Number of components	1	1
Number of terminals	8	8
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL
Certification status	COMMERCIAL	COMMERCIAL
surface mount	YES	YES
Terminal surface	MATTE TIN	MATTE TIN
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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