RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN
Parameter Name | Attribute value |
Maker | Mitsubishi |
package instruction | FLANGE MOUNT, R-CDFM-F2 |
Contacts | 2 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Is Samacsys | N |
Shell connection | SOURCE |
Configuration | SINGLE |
Maximum drain current (Abs) (ID) | 6 A |
Maximum drain current (ID) | 6 A |
FET technology | JUNCTION |
highest frequency band | C BAND |
JESD-30 code | R-CDFM-F2 |
Number of components | 1 |
Number of terminals | 2 |
Operating mode | DEPLETION MODE |
Maximum operating temperature | 175 °C |
Package body material | CERAMIC, METAL-SEALED COFIRED |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Polarity/channel type | N-CHANNEL |
Maximum power consumption environment | 42.8 W |
Minimum power gain (Gp) | 7 dB |
Certification status | Not Qualified |
surface mount | YES |
Terminal form | FLAT |
Terminal location | DUAL |
transistor applications | AMPLIFIER |
Transistor component materials | GALLIUM ARSENIDE |
Base Number Matches | 1 |
MGFC40V7177-01 | PTN1005H2180BBWP | |
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Description | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN | Fixed Resistor, Thin Film, 0.25W, 218ohm, 100V, 0.1% +/-Tol, 50ppm/Cel, Surface Mount, 1005, CHIP |
package instruction | FLANGE MOUNT, R-CDFM-F2 | CHIP |
Reach Compliance Code | unknown | not_compliant |
ECCN code | EAR99 | EAR99 |
Number of terminals | 2 | 2 |
Maximum operating temperature | 175 °C | 155 °C |
Package form | FLANGE MOUNT | SMT |
surface mount | YES | YES |