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MGFC40V7177-01

Description
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN
CategoryThe transistor   
File Size58KB,2 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
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MGFC40V7177-01 Overview

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN

MGFC40V7177-01 Parametric

Parameter NameAttribute value
MakerMitsubishi
package instructionFLANGE MOUNT, R-CDFM-F2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Shell connectionSOURCE
ConfigurationSINGLE
Maximum drain current (Abs) (ID)6 A
Maximum drain current (ID)6 A
FET technologyJUNCTION
highest frequency bandC BAND
JESD-30 codeR-CDFM-F2
Number of components1
Number of terminals2
Operating modeDEPLETION MODE
Maximum operating temperature175 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment42.8 W
Minimum power gain (Gp)7 dB
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsGALLIUM ARSENIDE
Base Number Matches1

MGFC40V7177-01 Related Products

MGFC40V7177-01 PTN1005H2180BBWP
Description RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN Fixed Resistor, Thin Film, 0.25W, 218ohm, 100V, 0.1% +/-Tol, 50ppm/Cel, Surface Mount, 1005, CHIP
package instruction FLANGE MOUNT, R-CDFM-F2 CHIP
Reach Compliance Code unknown not_compliant
ECCN code EAR99 EAR99
Number of terminals 2 2
Maximum operating temperature 175 °C 155 °C
Package form FLANGE MOUNT SMT
surface mount YES YES

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