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MA4E191M

Description
SILICON, HIGH BARRIER SCHOTTKY, KU BAND, MIXER DIODE, CERAMIC PACKAGE-2
Categorydiode   
File Size137KB,5 Pages
ManufacturerTE Connectivity
Websitehttp://www.te.com
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MA4E191M Overview

SILICON, HIGH BARRIER SCHOTTKY, KU BAND, MIXER DIODE, CERAMIC PACKAGE-2

MA4E191M Parametric

Parameter NameAttribute value
MakerTE Connectivity
package instructionO-XEMW-N2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Other featuresMATCHED PAIR
ConfigurationSEPARATE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeMIXER DIODE
frequency bandKU BAND
maximum impedance450 Ω
JESD-30 codeO-XEMW-N2
maximum noise index7 dB
Number of components2
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialUNSPECIFIED
Package shapeROUND
Package formMICROWAVE
Pulse input maximum power0.1 W
Minimum pulse input power0.5 W
Certification statusNot Qualified
surface mountYES
technologySCHOTTKY
Terminal formNO LEAD
Terminal locationEND
Schottky barrier typeHIGH BARRIER
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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