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HZS13NB2

Description
Zener Diode, 12.875V V(Z), 2.21%, 0.4W, Silicon, Unidirectional, DO-34, MHD, 2 PIN
Categorydiode   
File Size31KB,7 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

HZS13NB2 Overview

Zener Diode, 12.875V V(Z), 2.21%, 0.4W, Silicon, Unidirectional, DO-34, MHD, 2 PIN

HZS13NB2 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerHitachi (Renesas )
Parts packaging codeDO-34
package instructionO-LALF-W2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Other featuresLOW LEAKAGE, LOW ZENER IMPEDANCE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance25 Ω
JEDEC-95 codeDO-34
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation0.4 W
Certification statusNot Qualified
Nominal reference voltage12.88 V
surface mountNO
technologyZENER
Terminal formWIRE
Terminal locationAXIAL
Maximum voltage tolerance2.21%
Working test current5 mA
Base Number Matches1
HZS-N Series
Silicon Epitaxial Planar Zener Diodes for Stabilized Power
Supply
ADE-208-124 (Z)
Rev. 0
Features
Low leakage, low zener impedance and maximum power dissipation of 400mW are ideally suited for
stabilized power supply, etc.
Wide spectrum from 1.88V through 38.52V of zener voltage provide flexible application.
Suitable for 5mm-pitch high speed automatic insertion.
Ordering Information
Type No.
HZS-N Series
Mark
Type No.
Package Code
MHD
Outline
1
Type No.
Cathode band
1. Cathode
2. Anode
Absolute Maximum Ratings
(Ta = 25°C)
Item
Power dissipation
Junction temperature
Storage temperature
Symbol
Pd
Tj
Tstg
Value
400
200
–55 to +175
Unit
mW
°C
°C
2
7.5
B
2

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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