Power Field-Effect Transistor, 8A I(D), 30V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Parameter Name | Attribute value |
Maker | Fairchild |
package instruction | SMALL OUTLINE, R-PDSO-G4 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Is Samacsys | N |
Shell connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 30 V |
Maximum drain current (Abs) (ID) | 8 A |
Maximum drain current (ID) | 8 A |
Maximum drain-source on-resistance | 0.028 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-PDSO-G4 |
Number of components | 1 |
Number of terminals | 4 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Polarity/channel type | N-CHANNEL |
Maximum power dissipation(Abs) | 3 W |
Maximum pulsed drain current (IDM) | 15 A |
Certification status | Not Qualified |
surface mount | YES |
Terminal form | GULL WING |
Terminal location | DUAL |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Base Number Matches | 1 |