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NDT453NJ23Z

Description
Power Field-Effect Transistor, 8A I(D), 30V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
CategoryThe transistor   
File Size79KB,7 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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NDT453NJ23Z Overview

Power Field-Effect Transistor, 8A I(D), 30V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

NDT453NJ23Z Parametric

Parameter NameAttribute value
MakerFairchild
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)8 A
Maximum drain current (ID)8 A
Maximum drain-source on-resistance0.028 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)3 W
Maximum pulsed drain current (IDM)15 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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