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MMT05A230T3,
MMT05A260T3,
MMT05A310T3
Preferred Devices
Thyristor Surge Protectors
High Voltage Bidirectional TSPD
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These Thyristor Surge Protective devices (TSPD) prevent
overvoltage damage to sensitive circuits by lightning, induction and
power line crossings. They are breakover−triggered crowbar
protectors. Turn−off occurs when the surge current falls below the
holding current value.
Secondary protection applications for electronic telecom equipment
at customer premises.
•
High Surge Current Capability:
50 Amps
10 x 1000
μsec;
for
Controlled Temperature Environments in the
SMA
package
•
The MMT05A230T3 Series is used to help equipment meet various
regulatory requirements including: Telcordia 1089, ITU K.20 &
K.21, IEC 950 and FCC Part 68
•
Bidirectional Protection in a Single Device
•
Little Change of Voltage Limit with Transient Amplitude or Rate
•
Freedom from Wearout Mechanisms Present in Non−Semiconductor
Devices
•
Fail−Safe, Shorts When Overstressed, Preventing Continued
Unprotected Operation
•
Surface Mount Technology (SMT)
•
Indicates UL Registered − File #E210057
•
Pb−Free Packages are Available
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Off−State Voltage − Maximum
MMT05A230T3
MMT05A260T3
MMT05A310T3
Maximum Pulse Surge Short Circuit
Current Non−Repetitive
Double Exponential Decay Waveform
(Notes 1 and 2)
8 x 20
msec
10 x 160
msec
10 x 560
msec
10 x 1000
msec
Maximum Non−Repetitive Rate of
Change of On−State Current Double
Exponential Waveform,
I
PK
= 50 A, P
W
= 15
ms
Symbol
V
DM
Value
"170
"200
"270
A(pk)
Unit
Volts
BIDIRECTIONAL TSPD
50 AMP SURGE
265 thru 365 VOLTS
MT1
MT2
SMA
(No Polarity)
CASE 403D
MARKING DIAGRAM
xxx
AYWWG
xxx
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
I
PPS1
I
PPS2
I
PPS3
I
PPS4
di/dt
"150
"100
"70
"50
"100
A/ms
Preferred
devices are recommended choices for future use
and best overall value.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Allow cooling before testing second polarity.
2. Measured under pulse conditions to reduce heating.
©
Semiconductor Components Industries, LLC, 2006
1
January, 2006 − Rev. 5
Publication Order Number:
MMT05A230T3/D
MMT05A230T3, MMT05A260T3, MMT05A310T3
THERMAL CHARACTERISTICS
Characteristic
Operating Temperature Range
Blocking or Conducting State
Overload Junction Temperature − Maximum Conducting State Only
Instantaneous Peak Power Dissipation (I
pk
= 50A, 10x1000
μsec
@ 25°C)
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Symbol
T
J1
T
J2
P
PK
T
L
Max
−40 to + 125
+ 175
2000
260
Unit
°C
°C
W
°C
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Devices are bidirectional. All electrical parameters apply to forward and reverse polarities.
Characteristics
Breakover Voltage (Both polarities)
(dv/dt = 100 V/μs, I
SC
= 1.0 A, Vdc = 1000 V)
MMT05A230T3
MMT05A260T3
MMT05A310T3
MMT05A230T3
MMT05A260T3
MMT05A310T3
Breakover Voltage (Both polarities)
(f = 60 Hz, I
SC
= 1.0 A(rms), V
OC
= 1000 V(rms),
R
I
= 1.0 kΩ, t = 0.5 cycle) (Note 3)
(+65°C)
MMT05A230T3
MMT05A260T3
MMT05A310T3
Breakover Voltage Temperature Coefficient
Breakdown Voltage (I
(BR)
= 1.0 mA) Both polarities
MMT05A230T3
MMT05A260T3
MMT05A310T3
Off State Current (V
D1
= 50 V) Both polarities
Off State Current
(V
D2
= V
DM
) Both polarities
On−State Voltage (I
T
= 1.0 A)
(PW
≤
300
μs,
Duty Cycle
≤
2%) (Note 3)
Breakover Current (f = 60 Hz, V
DM
= 1000 V(rms), R
S
= 1.0 kΩ)
Both polarities
Holding Current (Both polarities)
V
S
= 500 Volts; I
T
(Initiating Current) =
"1.0
Amp
Critical Rate of Rise of Off−State Voltage
(Linear waveform, V
D
= Rated V
BR
, T
J
= 25°C)
Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V(rms) Signal)
Capacitance
(f = 1.0 MHz, 2.0 Vdc, 1.0 V(rms) Signal)
3. Measured under pulse conditions to reduce heating.
(Note 3)
I
D1
I
D2
V
T
I
BO
I
H
dv/dt
C
O
dV
(BO)
/dT
J
V
(BR)
−
−
−
−
−
−
−
150
2000
−
−
190
240
280
−
−
1.53
230
340
−
22
35
−
−
−
2.0
5.0
3.0
−
−
−
−
50
μA
Volts
mA
mA
V/μs
pF
−
−
−
−
−
−
−
0.08
280
340
400
−
%/°C
Volts
V
(BO)
MMT05A230T3
MMT05A260T3
MMT05A310T3
−
−
−
−
−
−
265
320
365
Symbol
V
(BO)
−
−
−
−
−
−
−
−
−
−
−
−
265
320
365
280
340
400
Volts
Min
Typ
Max
Unit
Volts
(+65°C)
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2
MMT05A230T3, MMT05A260T3, MMT05A310T3
Voltage Current Characteristic of TSPD
(Bidirectional Device)
+ Current
Symbol
I
D1
, I
D2
V
D1
, V
D2
V
BR
V
BO
I
BO
I
H
V
TM
Parameter
Off State Leakage Current
Off State Blocking Voltage
Breakdown Voltage
Breakover Voltage
Breakover Current
Holding Current
On State Voltage
+ Voltage
V
D1
V
D2
V
(BR)
I
H
I
D1
I
D2
I
(BO)
V
TM
V
(BO)
100
μ
I D1, OFF−STATE CURRENT ( A)
V
D1
= 50V
340
V BR , BREAKDOWN VOLTAGE (VOLTS)
320
300
280
260
240
220
200
180
160
−
2
0
−10
0
10
20
30
40
TEMPERATURE (°C)
50
60
70
MMT05A260T3
MMT05A310T3
10
1
MMT05A230T3
0.1
0.01
0
20
40
60
80
100
TEMPERATURE (°C)
120
140
Figure 1. Off−State Current versus Temperature
Figure 2. Typical Breakdown Voltage versus
Temperature
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3
MMT05A230T3, MMT05A260T3, MMT05A310T3
340
V BO , BREAKOVER VOLTAGE (VOLTS)
320
300
280
260
240
220
200
180
160
−
2
0
−
10
0
10
20
40
30
TEMPERATURE (°C)
50
60
70
MMT05A230T3
800
MMT05A310T3
MMT05A260T3
I H , HOLDING CURRENT (mA)
700
600
500
400
300
200
100
−
2
0
−10
0
10
20
30
40
TEMPERATURE (°C)
50
60
70
Figure 3. Typical Breakover Voltage versus
Temperature
100
Ipp − PEAK PULSE CURRENT − %Ipp
Peak
Value
t
r
= rise time to peak value
t
f
= decay time to half value
Figure 4. Typical Holding Current versus
Temperature
100
CURRENT (A)
10
50
Half Value
0
0 t
r
t
f
TIME (ms)
1
0.001
0.01
0.1
1
TIME (sec)
10
100
Figure 5. Exponential Decay Pulse Waveform
Figure 6. Peak Surge On−State Current versus
Surge Current Duration, Sinusoidal Waveform
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4
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