ES1PB, ES1PC & ES1PD
New Product
Vishay General Semiconductor
High Current Density Surface Mount Ultrafast Rectifiers
Major Ratings and Characteristics
I
F(AV)
V
RRM
t
rr
V
F
T
j
max.
1A
100 V, 150 V, 200 V
15 ns
0.92 V
150 °C
DO-220AA (SMP)
Features
•
•
•
•
•
•
•
•
Very low profile - typical height of 1.0 mm
Ideal for automated placement
Glass passivated chip junction
Ultrafast recovery times for high efficiency
Low forward voltage, low power losses
Low thermal resistance
Meets MSL level 1 per J-STD-020C
Solder Dip 260 °C, 40 seconds
Mechanical Data
Case:
DO-220AA (SMP)
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade
Polarity:
Color band denotes the cathode end
Typical Applications
For ues in secondary rectification and freewheeling
for ultrafast switching speeds of ac-to-dc and dc-to-dc
converters for both consumer and automotive appli-
cations.
Maximum Ratings
(T
A
= 25 °C unless otherwise specified)
Parameter
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current see Fig. 1
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
V
RRM
I
F(AV)
I
FSM
T
J
, T
STG
Symbol
ES1PB
EB
100
ES1PC
EC
150
1.0
30
- 55 to + 150
ES1PD
ED
200
V
A
A
°C
Unit
Document Number 88918
10-Nov-05
www.vishay.com
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ES1PB, ES1PC & ES1PD
Vishay General Semiconductor
Electrical Characteristics
(T
A
= 25 °C unless otherwise specified)
Parameter
Maximum instantaneous forward at I
F
= 0.6 A, T
J
= 25 °C
voltage
at I
F
= 1 A, T
J
= 25 °C
Maximum reverse current at
rated V
R
(1)
Test condition
Symbol
V
F
I
R
t
rr
t
rr
Q
RR
C
J
Value
0.865
0.920
5.0
500
15
25
30
8
10
10
Unit
V
µA
ns
ns
nC
pF
T
J
= 25 °C
T
J
= 125 °C
at I
F
= 0.5 A, I
R
= 1 A, I
rr
= 0.25 A
at I
F
= 1.0 A, V
R
= 30 V di/dt = 50 A/µs, I
rr
= 10 % IRM T
J
= 25 °C
at I
F
= 1.0 A, V
R
= 30 V di/dt = 50 A/µs, I
rr
= 10 % IRM T
J
= 100 °C
at I
F
= 1.0 A, V
R
= 30 V di/dt = 50 A/µs, I
rr
= 10 % IRM T
J
= 25 °C
at I
F
= 1.0 A, V
R
= 30 V di/dt = 50 A/µs, I
rr
= 10 % IRM T
J
= 100 °C
at 4.0 V, 1 MHz
Maximum reverse recovery time
Typical reverse recovery time
Typical reverse recovery time
Typical junction capacitance
Thermal Characteristics
(T
A
= 25 °C unless otherwise specified)
Parameter
Typical thermal resistance
(2)
Symbol
R
θJA
R
θJL
R
θJC
ES1PB
ES1PC
105
15
20
ES1PD
Unit
°C/W
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 5.0 x 5.0 mm copper pad areas. R
θJL
is
measured at the terminal of cathode band. R
θJC
is measured at the top centre of the body
Ratings and Characteristics Curves
(T
A
= 25
°C
unless otherwise specified)
1.2
30
Average Forward Rectified Current (A)
Peak Forward Surge Current (A)
130
140
150
1.0
0.8
0.6
0.4
T
L
measured
at the cathode
band
terminal
0.2
0
80
90
100
110
120
25
20
15
10
05
0
1
10
100
Lead Temperature (°C)
Number
of Cycles at 50 Hz
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
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Document Number 88918
10-Nov-05
ES1PB, ES1PC & ES1PD
Vishay General Semiconductor
100
100
Instantaneous Forward Current (A)
T
J
= 150
°C
1
T
J
= 25
°C
0.1
T
J
= 125
°C
0.01
0.2
Junction Capacitance (pF)
1.4
10
10
1
0.4
0.6
0.8
1.0
1.2
0.1
1
10
100
Instantaneous Forward
Vo
ltage (V)
Reverse
V
oltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
10000
T
J
= 150
°C
1000
1000
100
Transien Thermal Impedance (°C/W)
Instantaneous Reverse Current (
µA)
100
T
J
= 125
°C
10
1
0.1
0.01
10
20
30
40
50
60
70
80
90
100
T
J
= 25
°C
10
1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse
Voltag
(%)
t, Pulse Duration (sec.)
Figure 4. Typical Reverse Leakage Characteristics
Figure 6. Typical Transient Thermal Impedance
Package dimensions in inches (millimeters)
DO-220AA (SMP)
Cathode
band
0.012 (0.30) REF
0.086 (2.18)
0.074 (1.88)
0.053 (1.35)
0.041 (1.05)
0.036 (0.91)
0.024 (0.61)
0.142 (3.61)
0.126 (3.19)
0.158 (4.00)
0.146 (3.70)
0.103 (2.60)
0.087 (2.20)
0.032 (0.80)
0.016 (0.40)
0.013 (0.35)
0.004 (0.10)
0.045 (1.15)
0.033 (0.85)
0.012 (0.30)
0.000 (0.00)
0.100
(2.54)
0.018 (0.45)
0.006 (0.15)
0.105
(2.67)
0.025
(0.635)
0.030
(0.762)
0.050
(1.27)
Document Number 88918
10-Nov-05
www.vishay.com
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Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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