VS-E4PH6006L-N3
www.vishay.com
Vishay Semiconductors
Hyperfast Soft Recovery Diode,
60 A FRED Pt
®
Gen 4
FEATURES
Base cathode
2
• Gen 4 FRED Pt
®
technology
• Low I
RRM
and reverse recovery charge
• Very low forward voltage drop
• Polyimide passivated chip for high reliability
standard
2
1
1
Cathode
3
Anode
3
TO-247AD 2L
• 175 °C operating junction temperature
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Diode variation
TO-247AD 2L
60 A
600 V
1.48 V
see Recovery table
175 °C
Single die
DESCRIPTION
Gen 4 Fred technology, state of the art, ultralow V
F
, soft
switching optimized for Discontinuous (Critical) Mode (DCM)
and IGBT F/W diode.
The minimized conduction loss, optimized stored charge
and low recovery current minimized the switching losses
and reduce over dissipation in the switching element and
snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Average rectified forward current
Single pulse forward current
Operating junction and storage temperatures
SYMBOL
V
R
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 106 °C
T
C
= 25 °C, t
p
= 8.3 ms, half sine wave
TEST CONDITIONS
MAX.
600
60
425
-55 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage, blocking voltage
SYMBOL
V
BR
, V
R
TEST CONDITIONS
I
R
= 100 μA
I
F
= 50 A
I
F
= 60 A
Forward voltage
V
F
I
F
= 50 A, T
J
= 125 °C
I
F
= 60 A, T
J
= 125 °C
I
F
= 50 A, T
J
= 150 °C
I
F
= 60 A, T
J
= 150 °C
Reverse leakage current
Junction capacitance
I
R
C
T
V
R
= V
R
rated
T
J
= 125 °C, V
R
= V
R
rated
V
R
= 600 V
MIN.
600
-
-
-
-
-
-
-
-
-
TYP.
-
1.68
1.75
1.44
1.55
1.39
1.48
-
-
30
MAX.
-
-
2.0
-
-
-
1.65
50
500
-
μA
pF
V
UNITS
Revision: 19-Jan-17
Document Number: 95898
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-E4PH6006L-N3
www.vishay.com
Vishay Semiconductors
SYMBOL
t
rr
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 60 A
dI
F
/dt = 1000 A/μs
V
R
= 400 V
TEST CONDITIONS
MIN.
-
-
-
-
-
-
TYP.
68
92
20
40
945
2500
MAX.
-
-
-
-
-
-
UNITS
ns
A
nC
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
Peak recovery current
Reverse recovery charge
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Thermal resistance, junction to case
Thermal resistance, case to heat sink
Weight
Mounting torque
Marking device
Case style TO-247AD 2L
SYMBOL
R
thJC
R
thCS
Mounting surface, flat, smooth and greased
TEST CONDITIONS
MIN.
-
-
-
-
6.0
(5)
TYP.
-
0.25
6.0
0.21
-
MAX.
0.6
-
-
-
12
(20)
g
oz.
kgf · cm
(lbf · in)
UNITS
°C/W
E4PH6006L
I
F
- Instantaneous Forward Current (A)
1000
1000
I
R
- Reverse Current (μA)
100
10
1
0.1
175 °C
150 °C
125 °C
100
T
J
= 175 °C
10
T
J
= 150°C
T
J
= 125°C
T
J
= 25 °C
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
25 °C
0.01
0.001
0
200
400
600
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
1000
C
T
- Junction Capacitance (pF)
100
10
0
100
200
300
400
500
600
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Revision: 19-Jan-17
Document Number: 95898
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-E4PH6006L-N3
www.vishay.com
Vishay Semiconductors
10
Z
thJC
- Thermal Impedance
Junction to Case (°C/W)
1
0.50
0.20
0.10
0.05
0.02
0.01
0.1
single
pulse
0.01
0.001
0.01
0.1
1
10
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
180
130
120
Allowable Case Temperature (°C)
160
110
140
DC
100
125 °C
t
rr
(ns)
90
80
25 °C
120
Square
wave (D = 0.50)
80 % rated V
R
applied
See
note
(1)
80
0
10
20
30
40
50
70
60
50
400
500
600
700
800
900
1000
100
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Max. Allowable Case Temperature vs.
Average Forward Current
180
dI
F
/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
3000
2500
125 °C
2000
Average Power Loss (W)
150
120
RMS limit
Q
rr
(nC)
90
60
30
0
0
10
20
30
40
50
60
D = 0.01
D = 0.05
D = 0.10
D = 0.20
D = 0.50
1500
1000
500
0
25 °C
70
80
90
400
500
600
700
800
900
1000
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Note
Formula used: T
C
= T
J
- (P
d
+ P
dREV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see Fig.5)
P
dREV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R
= rated V
R
dI
F
/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
(1)
Revision: 19-Jan-17
Document Number: 95898
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-E4PH6006L-N3
www.vishay.com
Vishay Semiconductors
50
45
40
35
30
125 °C
I
rec
(A)
25
20
15
10
5
0
400
500
600
700
800
900
1000
25 °C
dI
F
/dt (A/μs)
Fig. 9 - Typical Reverse Recovery vs. dI
F
/dt
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
5
6
-
-
E
2
4
3
P
4
H
5
60
6
06
7
L
8
-N3
9
Vishay Semiconductors product
Circuit configuration:
E = single diode 2 pins
-
-
-
-
FRED Gen 4
P = TO-247 package
Process type:
H = Hyperfast recovery
Current rating (60 = 60 A)
7
8
9
-
-
-
Voltage rating (06 = 600 V)
L = long lead
Environmental digit:
-N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-E4PH6006L-N3
QUANTITY PER TUBE
25
MINIMUM ORDER QUANTITY
500
PACKAGING DESCRIPTION
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
TO-247AD 2L
TO-247AD 2L
www.vishay.com/doc?95536
www.vishay.com/doc?95648
Revision: 19-Jan-17
Document Number: 95898
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
TO-247AD 2L
DIMENSIONS
in millimeters and inches
(3)
B
(2) R/2
Q
2xR
(2)
1, 2
(5) L1
C
L
See
view B
A
(4)
E1
0.01
M
D B
M
View A - A
2 x b2
2xb
0.10
M
C A
M
(b1, b3)
C
2x e
A1
3
E
S
A2
A
D2
A
(6) F P
Ø K
M
D B
M
A
(Datum B)
F P1
D
D
Thermal pad
4
D1 (4)
Plating
Base metal
D D
(c)
c1
(b, b2)
(4)
Section
C - C, D - D
C
C
View B
SYMBOL
A
A1
A2
b
b1
b2
b3
c
c1
D
D1
D2
MILLIMETERS
MIN.
4.65
2.21
1.50
0.99
0.99
1.65
1.65
0.38
0.38
19.71
13.08
0.51
MAX.
5.31
2.59
2.49
1.40
1.35
2.39
2.34
0.89
0.84
20.70
-
1.35
INCHES
MIN.
0.183
0.087
0.059
0.039
0.039
0.065
0.065
0.015
0.015
0.776
0.515
0.020
MAX.
0.209
0.102
0.098
0.055
0.053
0.094
0.092
0.035
0.033
0.815
-
0.053
NOTES
SYMBOL
E
E1
e
ØK
L
L1
ØP
Ø P1
Q
MILLIMETERS
MIN.
15.29
13.46
5.46 BSC
0.254
19.81
3.71
3.56
-
5.31
4.52
20.32
4.29
3.66
6.98
5.69
5.49
MAX.
15.87
-
INCHES
MIN.
0.602
0.53
0.010
0.780
0.146
0.14
-
0.209
0.178
0.800
0.169
0.144
0.275
0.224
0.216
MAX.
0.625
-
NOTES
3
0.215 BSC
3
4
R
S
5.51 BSC
0.217 BSC
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5M-1994
(2)
Contour of slot optional
(3)
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4)
Thermal pad contour optional with dimensions D1 and E1
(5)
Lead finish uncontrolled in L1
(6)
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7)
Outline conforms to JEDEC
®
outline TO-247 with exception of dimension Q
Revision: 20-Apr-17
Document Number: 95536
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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