Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 12A (Tc) Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 20mΩ @ 6.6A, 10V Maximum power Dissipation (Ta=25°C): 31W (Tc) Type: P channel P channel, -30V, -12A, 0.020Ω@-10V
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Maker | Vishay |
package instruction | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, CHIPFET-8 |
Contacts | 8 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Samacsys Description | Vishay SI5419DU-T1-GE3 P-channel MOSFET Transistor, 9.9 A, -30 V, 8-Pin PowerPAK ChipFET |
Shell connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 30 V |
Maximum drain current (ID) | 12 A |
Maximum drain-source on-resistance | 0.02 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-XDSO-N3 |
JESD-609 code | e3 |
Humidity sensitivity level | 1 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Package body material | UNSPECIFIED |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | 260 |
Polarity/channel type | P-CHANNEL |
Maximum pulsed drain current (IDM) | 40 A |
Certification status | Not Qualified |
surface mount | YES |
Terminal surface | MATTE TIN |
Terminal form | NO LEAD |
Terminal location | DUAL |
Maximum time at peak reflow temperature | 40 |
transistor applications | SWITCHING |
Transistor component materials | SILICON |