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SI5419DU-T1-GE3

Description
Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 12A (Tc) Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 20mΩ @ 6.6A, 10V Maximum power Dissipation (Ta=25°C): 31W (Tc) Type: P channel P channel, -30V, -12A, 0.020Ω@-10V
CategoryDiscrete semiconductor    The transistor   
File Size139KB,9 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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SI5419DU-T1-GE3 Overview

Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 12A (Tc) Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 20mΩ @ 6.6A, 10V Maximum power Dissipation (Ta=25°C): 31W (Tc) Type: P channel P channel, -30V, -12A, 0.020Ω@-10V

SI5419DU-T1-GE3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerVishay
package instructionHALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, CHIPFET-8
Contacts8
Reach Compliance Codecompliant
ECCN codeEAR99
Samacsys DescriptionVishay SI5419DU-T1-GE3 P-channel MOSFET Transistor, 9.9 A, -30 V, 8-Pin PowerPAK ChipFET
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)12 A
Maximum drain-source on-resistance0.02 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XDSO-N3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)40 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
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