a. Surface mounted on 1" x 1" FR4 board with full copper, t = 10 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 10 s.
c. Refer to IPC/JEDEC
®
(J-STD-020), no manual or hand soldering.
d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump.
e. Based on T
A
= 25 °C.
THERMAL RESISTANCE RATINGS
PARAMETER
t = 10 s
Maximum Junction-to-Ambient
c, d
Maximum Junction-to-Ambient
t = 10 s
Notes
a. Surface mounted on 1" x 1" FR4 board with full copper.
b. Maximum under steady state conditions is 100 °C/W.
c. Surface mounted on 1" x 1" FR4 board with minimum copper.
d. Maximum under steady state conditions is 190 °C/W.
S15-1510-Rev. B, 29-Jun-15
a, b
Document Number: 63300
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1
m
m
I
D
A
I
DM
I
S
P
D
W
T
J
, T
stg
°C
SYMBOL
R
thJA
TYPICAL
55
125
MAXIMUM
70
160
UNIT
°C/W
Si8472DB
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
≤
-5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 1.5 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 2.5 V, I
D
= 1 A
V
GS
= 1.8 V, I
D
= 1 A
V
GS
= 1.5 V, I
D
= 0.5 A
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 1.5 A, dI/dt = 100 A/μs, T
J
= 25 °C
I
S
= 1.5 A, V
GS
= 0
T
A
= 25 °C
-
-
-
-
-
-
-
-
-
0.7
15
6
7
8
1.5
20
1.2
30
15
-
-
V
ns
nC
ns
A
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= -10 V, R
L
= 6.7
Ω
I
D
≅
-1.5 A, V
GEN
= -8 V, R
g
= 1
Ω
V
DD
= -10 V, R
L
= 6.7
Ω
I
D
≅
1.5 A, V
GEN
= -4.5 V, R
g
= 1
Ω
V
GS
= 0.1 V, f = 1 MHz
V
DS
= 10 V, V
GS
= 8 V, I
D
= 1.5 A
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 1.5 A
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
630
105
42
12
6.8
0.8
1.1
5.3
7
15
30
10
5
15
30
10
-
-
-
18
11
-
-
-
15
30
60
20
10
30
60
20
ns
Ω
nC
pF
g
fs
V
DS
= 10 V, I
D
= 1.5 A
20
-
-
0.4
-
-
-
10
-
-
-
-
-
-
16
-2.6
-
-
-
-
-
0.036
0.041
0.046
0.050
16
-
-
-
0.9
± 100
1
10
-
0.044
0.050
0.056
0.070
-
S
Ω
V
mV/°C
V
nA
μA
A
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1510-Rev. B, 29-Jun-15
Document Number: 63300
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8472DB
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20
V
GS
= 5 V thru 2 V
16
I
D
- Drain Current (A)
I
D
- Drain Current (A)
V
GS
= 1.5 V
12
8
10
Vishay Siliconix
6
T
C
= 25
°C
4
T
C
= 125
°C
2
8
4
V
GS
= 1 V
0
0.0
0.5
1.0
1.5
V
DS
- Drain-to-Source Voltage (V)
2.0
T
C
= - 55
°C
0
0.0
0.3
0.6
0.9
1.2
V
GS
-
Gate-to-Source
Voltage (V)
1.5
Output Characteristics
Transfer Characteristics
0.10
800
V
GS
= 1.5 V
R
DS(on)
- On-Resistance (Ω)
0.08
C
iss
600
C - Capacitance (pF)
0.06
V
GS
= 1.8 V
V
GS
= 2.5 V
0.04
V
GS
= 4.5 V
0.02
0
4
8
12
16
20
I
D
- Drain Current (A)
400
200
C
oss
C
rss
0
0
4
8
12
16
20
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
8
I
D
= 1.5 A
R
DS(on)
- On-Resistance (Normalized)
7
V
GS
-
Gate-to-Source
Voltage (V)
6
5
4
3
2
1
0
0
2
4
6
8
10
12
Q
g
- Total
Gate
Charge (nC)
V
DS
= 5 V
V
DS
= 16 V
V
DS
= 10 V
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
- 50
V
GS
= 1.5 V; I
D
= 0.5 A
V
GS
= 4.5 V, 2.5 V, 1.8 V; I
D
= 1.5 A
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
S15-1510-Rev. B, 29-Jun-15
On-Resistance vs. Junction Temperature
Document Number: 63300
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8472DB
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.10
Vishay Siliconix
I
D
= 1.5 A
0.08
R
DS(on)
- On-Resistance (Ω)
I
S
-
Source
Current (A)
10
T
J
= 150
°C
0.06
T
J
= 125
°C
1
T
J
= 25
°C
0.04
T
J
= 25
°C
0.02
0.1
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
-
Source-to-Drain
Voltage (V)
1.2
0.00
0
1
2
3
4
5
V
GS
-
Gate-to-Source
Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.8
25
0.7
20
0.6
Power (W)
125
150
V
GS(th)
(V)
I
D
= 250 μA
15
0.5
10
0.4
0.3
5
0.2
- 50
- 25
0
25
50
75
100
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by R
DS(on)
*
10
I
D
- Drain Current (A)
100
μs
1
1 ms
10 ms
0.1
T
A
= 25
°C
BVDSS Limited
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
100 ms
10
s,
1
s
DC
Safe Operating Area, Junction-to-Ambient
S15-1510-Rev. B, 29-Jun-15
Document Number: 63300
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8472DB
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1.5
Vishay Siliconix
5
4
1.2
Power Dissipation (W)
0
25
50
75
100
T
A
- Case Temperature (°C)
125
150
I
D
- Drain Current (A)
3
0.9
2
0.6
1
0.3
0
0.0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Current Derating
a
Note
• When mounted on 1" x 1" FR4 with full copper.
Power Derating
Note
a. The power dissipation P
D
is based on T
J
(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S15-1510-Rev. B, 29-Jun-15
Document Number: 63300
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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