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TLZ16B-GS08

Description
Accuracy: - Voltage regulation value (typical value): 15.25V (Min) ~ 16.04V (Max) Reverse leakage current: 40nA @ 14.5V Maximum power: 500mW 16V, 500mW
CategoryDiscrete semiconductor    Zener diode   
File Size111KB,8 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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TLZ16B-GS08 Overview

Accuracy: - Voltage regulation value (typical value): 15.25V (Min) ~ 16.04V (Max) Reverse leakage current: 40nA @ 14.5V Maximum power: 500mW 16V, 500mW

TLZ16B-GS08 Parametric

Parameter NameAttribute value
Accuracy-
Stable voltage value (typical value)15.25V(Min)~16.04V(Max)
Reverse leakage current40nA @ 14.5V
Maximum power500mW

TLZ16B-GS08 Related Products

TLZ16B-GS08 TLZ16C-GS08 TLZ7V5C-GS08 TLZ13A-GS08 TLZ30B-GS08 TLZ3V9B-GS08
Description Accuracy: - Voltage regulation value (typical value): 15.25V (Min) ~ 16.04V (Max) Reverse leakage current: 40nA @ 14.5V Maximum power: 500mW 16V, 500mW Accuracy: - Voltage regulation value (typical value): 15.69V (Min) ~ 16.51V (Max) Reverse leakage current: 40nA @ 14.9V Maximum power: 500mW 16V, 500mW Accuracy: - Voltage regulation value (typical value): 7.29V (Min) ~ 7.67V (Max) Reverse leakage current: 3uA @ 6.93V Maximum power: 500mW 7.5V, 500mW Accuracy: - Voltage regulation value (typical value): 12.11V (Min) ~ 12.75V (Max) Reverse leakage current: 40nA @ 11.5V Maximum power: 500mW 13V, 500mW Accuracy: - Voltage regulation value (typical value): 27.7V (Min) ~ 29.13V (Max) Reverse leakage current: 40nA @ 26.3V Maximum power: 500mW 30V, 500mW Accuracy: - Voltage regulation value (typical value): 3.89V (Min) ~ 4.16V (Max) Reverse leakage current: 3uA @ 1V Maximum power: 500mW 3.9V, 500mW
Stable voltage value (typical value) 15.25V(Min)~16.04V(Max) 15.69V(Min)~16.51V(Max) 7.29V(Min)~7.67V(Max) 12.11V(Min)~12.75V(Max) 27.7V(Min)~29.13V(Max) 3.89V(Min)~4.16V(Max)
Reverse leakage current 40nA @ 14.5V 40nA @ 14.9V 3uA @ 6.93V 40nA @ 11.5V 40nA @ 26.3V 3uA @ 1V
Maximum power 500mW 500mW 500mW 500mW 500mW 500mW
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