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SSM3J35MFV,L3F

Description
Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 100mA Gate-source threshold voltage: - Drain-source on-resistance: 8Ω @ 50mA, 4V Maximum power dissipation (Ta=25° C): 150mW Type: P-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

SSM3J35MFV,L3F Overview

Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 100mA Gate-source threshold voltage: - Drain-source on-resistance: 8Ω @ 50mA, 4V Maximum power dissipation (Ta=25° C): 150mW Type: P-channel

SSM3J35MFV,L3F Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)20V
Continuous drain current (Id) at 25°C100mA
Gate-source threshold voltage-
Drain-source on-resistance8Ω @ 50mA,4V
Maximum power dissipation (Ta=25°C)150mW
typeP channel
SSM3J35MFV
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM3J35MFV
High-Speed Switching Applications
Analog Switch Applications
0.22±0.05
Unit: mm
1.2 V drive
Low ON-resistance
:
R
on
= 44
Ω
(max) (@V
GS
= -1.2 V)
1.2±0.05
0.8±0.05
0.8±0.05
:
R
on
= 22
Ω
(max) (@V
GS
= -1.5 V)
:
R
on
= 11
Ω
(max) (@V
GS
= -2.5 V)
:
R
on
=
8
Ω
(max) (@V
GS
= -4.0 V)
0.4
1
2
3
0.4
Absolute Maximum Ratings (Ta = 25˚C)
Characteristic
Drain–source voltage
Gate–source voltage
DC
Drain current
Pulse
Drain power dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
(Note 1)
T
ch
T
stg
Rating
-20
±10
-100
mA
-200
150
150
−55
to 150
mW
°C
°C
Unit
V
V
1: Gate
2: Source
3: Drain
0.5±0.05
VESM
JEDEC
JEITA
TOSHIBA
2-1L1B
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 1.5 mg (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Mounted on an FR4 board (25.4 mm
×
25.4 mm
×
1.6 mm, Cu Pad: 0.585 mm
2
)
Marking
3
Equivalent Circuit
(top view)
3
PZ
1
2
1
2
Start of commercial production
2008-01
1
2015-09-09
0.13±0.05
0.32±0.05
1.2±0.05

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