SSM3J332R,LF datasheet, PDF - EEWORLD Datasheet

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SSM3J332R,LF: DescriptionDrain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 6A Gate-source threshold voltage: 1.2V @ 1mA Drain-source on-resistance: 42mΩ @ 5A, 10V Maximum power dissipation (Ta =25°C): 1W Type: P-channel; CategoryDiscrete semiconductor The transistor; File Size412KB，6 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/; Environmental Compliance

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SSM3J332R,LF Overview

Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 6A Gate-source threshold voltage: 1.2V @ 1mA Drain-source on-resistance: 42mΩ @ 5A, 10V Maximum power dissipation (Ta =25°C): 1W Type: P-channel

SSM3J332R,LF Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Toshiba Semiconductor
Reach Compliance Code	compliant
Samacsys Description	MOSFET SM Sig P-CH MOS 12V VGSS -6A -30VDSS
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	6 A
Maximum drain-source on-resistance	0.042 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-F3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

SSM3J332R,LF Related Products

	SSM3J332R,LF	SSM3J332R,LF(A	SSM3J332R,LSONYF(A
Description	Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 6A Gate-source threshold voltage: 1.2V @ 1mA Drain-source on-resistance: 42mΩ @ 5A, 10V Maximum power dissipation (Ta =25°C): 1W Type: P-channel	Small Signal Field-Effect Transistor, 6A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET	Small Signal Field-Effect Transistor, 6A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Maker	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor
Reach Compliance Code	compliant	unknown	unknown
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V	30 V	30 V
Maximum drain current (ID)	6 A	6 A	6 A
Maximum drain-source on-resistance	0.042 Ω	0.042 Ω	0.042 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-F3	R-PDSO-F3	R-PDSO-F3
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL
surface mount	YES	YES	YES
Terminal form	FLAT	FLAT	FLAT
Terminal location	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
package instruction	-	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3

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