CSD88537ND datasheet, PDF - EEWORLD Datasheet

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CSD88537ND: DescriptionDrain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 15A Gate-source threshold voltage: 3.6V @ 250uA Drain-source on-resistance: 15mΩ @ 8A, 10V Maximum power dissipation (Ta =25°C): 2.1W Type: Dual N-channel; CategoryDiscrete semiconductor The transistor; File Size1MB，17 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/; Environmental Compliance

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Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 15A Gate-source threshold voltage: 3.6V @ 250uA Drain-source on-resistance: 15mΩ @ 8A, 10V Maximum power dissipation (Ta =25°C): 2.1W Type: Dual N-channel

CSD88537ND Parametric

Parameter Name	Attribute value
Brand Name	Texas Instruments
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
package instruction	SOIC-8
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	AVALANCHE RATED
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	8 A
Maximum drain-source on-resistance	0.019 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	5.2 pF
JEDEC-95 code	MS-012AA
JESD-30 code	R-PDSO-G8
JESD-609 code	e4
Humidity sensitivity level	1
Number of components	2
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	2.1 W
Maximum pulsed drain current (IDM)	62 A
surface mount	YES
Terminal surface	Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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